Справочник MOSFET. NVMTS0D7N06CL

 

NVMTS0D7N06CL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVMTS0D7N06CL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 294.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 477 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 26.3 ns
   Cossⓘ - Выходная емкость: 8490 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00068 Ohm
   Тип корпуса: DFNW8

 Аналог (замена) для NVMTS0D7N06CL

 

 

NVMTS0D7N06CL Datasheet (PDF)

 ..1. Size:285K  onsemi
 nvmts0d7n06cl.pdf

NVMTS0D7N06CL NVMTS0D7N06CL

MOSFET - Power, SingleN-Channel60 V, 0.68 mW, 477 ANVMTS0D7N06CLFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard0.68 mW @ 10 V AEC-Q101 Qualified and PPAP Capable60 V477 A0.90 mW @

 4.1. Size:246K  onsemi
 nvmts0d7n04cl.pdf

NVMTS0D7N06CL NVMTS0D7N06CL

NVMTS0D7N04CLMOSFET Power, SingleN-Channel40 V, 0.63 mW, 433 AFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard0.63 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 433 A0.92 mW

 4.2. Size:243K  onsemi
 nvmts0d7n04c.pdf

NVMTS0D7N06CL NVMTS0D7N06CL

NVMTS0D7N04CMOSFET Power, SingleN-Channel40 V, 0.67 mW, 420 AFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard AEC-Q101 Qualified and PPAP Capable40 V 0.67 mW @ 10 V 420 A Wettab

 7.1. Size:389K  onsemi
 nvmts0d6n04c.pdf

NVMTS0D7N06CL NVMTS0D7N06CL

MOSFET Power, SingleN-Channel40 V, 0.48 mW, 533 ANVMTS0D6N04CFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Wettable Flank Plated for Enhanced Optical Inspection40 V 0.48 mW @ 10 V 533 A AEC-Q101 Qualified and PPAP C

 7.2. Size:397K  onsemi
 nvmts0d4n04cl.pdf

NVMTS0D7N06CL NVMTS0D7N06CL

MOSFET - Power, SingleN-Channel40 V, 0.4 mW, 553.8 ANVMTS0D4N04CLFeatures Small Footprint (8x8 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 0.4 mW @ 10 V

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