NVTFS002N04CL Todos los transistores

 

NVTFS002N04CL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVTFS002N04CL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 142 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 77 nS
   Cossⓘ - Capacitancia de salida: 1260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
   Paquete / Cubierta: WDFN8
 

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NVTFS002N04CL Datasheet (PDF)

 ..1. Size:266K  onsemi
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NVTFS002N04CL

NVTFS002N04CLMOSFET Power, SingleN-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS002N04CL - Wettable Flanks Product2.2 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 142 A3.5 mW

 2.1. Size:267K  onsemi
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NVTFS002N04CL

NVTFS002N04CMOSFET Power, SingleN-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS002N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 2.4 mW @ 10 V 136 A These

 7.1. Size:200K  onsemi
nvtfs003n04c.pdf pdf_icon

NVTFS002N04CL

NVTFS003N04CMOSFET Power, SingleN-Channel40 V, 3.5 mW, 103 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS003N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 3.5 mW @ 10 V 103 A These

 7.2. Size:184K  onsemi
nvtfs008n04c.pdf pdf_icon

NVTFS002N04CL

NVTFS008N04CPower MOSFET40 V, 7.1 mW, 48 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS008N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH

Otros transistores... NVMTS0D4N04CL , NVMTS0D6N04C , NVMTS0D7N04C , NVMTS0D7N04CL , NVMTS0D7N06CL , NVMYS4D6N04CL , NVR5124PL , NVTFS002N04C , STP65NF06 , NVTFS003N04C , NVTFS004N04C , NVTFS005N04C , NVTFS008N04C , NVTFS010N10MCL , NVTFS014P04M8L , NVTFS015N04C , NVTFS016N06C .

History: PJD1NA60 | RJK0851DPB | 5N65G-TM3-T | SM4435 | SM4306PRL | AP60WN2K1H | SVF13N50PN

 

 
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