NVTFS002N04CL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NVTFS002N04CL
Маркировка: 02NL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 85 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 142 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 49 nC
trⓘ - Время нарастания: 77 ns
Cossⓘ - Выходная емкость: 1260 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NVTFS002N04CL
NVTFS002N04CL Datasheet (PDF)
nvtfs002n04cl.pdf
NVTFS002N04CLMOSFET Power, SingleN-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS002N04CL - Wettable Flanks Product2.2 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 142 A3.5 mW
nvtfs002n04c.pdf
NVTFS002N04CMOSFET Power, SingleN-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS002N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 2.4 mW @ 10 V 136 A These
nvtfs003n04c.pdf
NVTFS003N04CMOSFET Power, SingleN-Channel40 V, 3.5 mW, 103 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS003N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 3.5 mW @ 10 V 103 A These
nvtfs008n04c.pdf
NVTFS008N04CPower MOSFET40 V, 7.1 mW, 48 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS008N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH
nvtfs005n04c.pdf
NVTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS005N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH
nvtfs004n04c.pdf
NVTFS004N04CMOSFET Power, SingleN-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS004N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 4.9 mW @ 10 V 77 A These De
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
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