NVTFS002N04CL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NVTFS002N04CL
Маркировка: 02NL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 85 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 142 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 49 nC
Время нарастания (tr): 77 ns
Выходная емкость (Cd): 1260 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0022 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NVTFS002N04CL
NVTFS002N04CL Datasheet (PDF)
nvtfs002n04cl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NVTFS002N04CLMOSFET Power, SingleN-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS002N04CL - Wettable Flanks Product2.2 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 142 A3.5 mW
nvtfs002n04c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NVTFS002N04CMOSFET Power, SingleN-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS002N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 2.4 mW @ 10 V 136 A These
nvtfs003n04c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NVTFS003N04CMOSFET Power, SingleN-Channel40 V, 3.5 mW, 103 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS003N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 3.5 mW @ 10 V 103 A These
nvtfs008n04c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NVTFS008N04CPower MOSFET40 V, 7.1 mW, 48 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS008N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH
nvtfs005n04c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NVTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS005N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH
nvtfs004n04c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NVTFS004N04CMOSFET Power, SingleN-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS004N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 4.9 mW @ 10 V 77 A These De
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![NVTFS002N04CL](https://alltransistors.com/images/us.png)
![NVTFS002N04CL](https://alltransistors.com/images/es.png)
![NVTFS002N04CL](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C