NVTFS010N10MCL Todos los transistores

 

NVTFS010N10MCL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVTFS010N10MCL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 77.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 57.8 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 625 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0106 Ohm
   Paquete / Cubierta: WDFN8
 
   - Selección ⓘ de transistores por parámetros

 

NVTFS010N10MCL Datasheet (PDF)

 ..1. Size:320K  onsemi
 nvtfs010n10mcl.pdf pdf_icon

NVTFS010N10MCL

NVTFS010N10MCLMOSFET - Power, SingleN-Channel100 V, 10.6 mW, 57.8 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS010N10MCLTAG - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable10.6 mW @ 10 V100 V 57.8

 7.1. Size:201K  onsemi
 nvtfs015n04c.pdf pdf_icon

NVTFS010N10MCL

NVTFS015N04CMOSFET Power, SingleN-Channel40 V, 17.3 mW, 27 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS015N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 17.3 mW @ 10 V 27 A These

 7.2. Size:268K  onsemi
 nvtfs016n06c.pdf pdf_icon

NVTFS010N10MCL

MOSFET - Power, SingleN-Channel, m8FL60 V, 16.3 mW, 32 ANVTFS016N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS016N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(on) MAX ID MAXInspection60 V 16.3 mW @ 10 V 32 A AEC-

 7.3. Size:217K  onsemi
 nvtfs014p04m8l.pdf pdf_icon

NVTFS010N10MCL

MOSFET Power, Single,P-Channel-40 V, 13.8 mW, -49 ANVTFS014P04M8LFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS014P04M8L - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable13.8 mW @ -10 V These D

MOSTRAR MÁS

Otros transistores... NVMYS4D6N04CL , NVR5124PL , NVTFS002N04C , NVTFS002N04CL , NVTFS003N04C , NVTFS004N04C , NVTFS005N04C , NVTFS008N04C , EMB04N03H , NVTFS014P04M8L , NVTFS015N04C , NVTFS016N06C , NVTFS020N06C , NVTFS024N06C , NVTFS030N06C , NVTFS052P04M8L , NVTFS5C453NL .

 

 
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