NVTFS010N10MCL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVTFS010N10MCL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 77.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 57.8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 625 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0106 Ohm

Encapsulados: WDFN8

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NVTFS010N10MCL datasheet

 ..1. Size:320K  onsemi
 nvtfs010n10mcl.pdf pdf_icon

NVTFS010N10MCL

NVTFS010N10MCL MOSFET - Power, Single N-Channel 100 V, 10.6 mW, 57.8 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFWS010N10MCLTAG - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 10.6 mW @ 10 V 100 V 57.8

 7.1. Size:201K  onsemi
 nvtfs015n04c.pdf pdf_icon

NVTFS010N10MCL

NVTFS015N04C MOSFET Power, Single N-Channel 40 V, 17.3 mW, 27 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS015N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 17.3 mW @ 10 V 27 A These

 7.2. Size:268K  onsemi
 nvtfs016n06c.pdf pdf_icon

NVTFS010N10MCL

MOSFET - Power, Single N-Channel, m8FL 60 V, 16.3 mW, 32 A NVTFS016N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS016N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(on) MAX ID MAX Inspection 60 V 16.3 mW @ 10 V 32 A AEC-

 7.3. Size:217K  onsemi
 nvtfs014p04m8l.pdf pdf_icon

NVTFS010N10MCL

MOSFET Power, Single, P-Channel -40 V, 13.8 mW, -49 A NVTFS014P04M8L Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS014P04M8L - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 13.8 mW @ -10 V These D

MOSTRAR MÁS

Otros transistores... NVMYS4D6N04CL, NVR5124PL, NVTFS002N04C, NVTFS002N04CL, NVTFS003N04C, NVTFS004N04C, NVTFS005N04C, NVTFS008N04C, AON7403, NVTFS014P04M8L, NVTFS015N04C, NVTFS016N06C, NVTFS020N06C, NVTFS024N06C, NVTFS030N06C, NVTFS052P04M8L, NVTFS5C453NL