All MOSFET. NVTFS010N10MCL Datasheet

 

NVTFS010N10MCL Datasheet and Replacement


   Type Designator: NVTFS010N10MCL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 77.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 625 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0106 Ohm
   Package: WDFN8
 

 NVTFS010N10MCL substitution

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NVTFS010N10MCL Datasheet (PDF)

 ..1. Size:320K  onsemi
nvtfs010n10mcl.pdf pdf_icon

NVTFS010N10MCL

NVTFS010N10MCLMOSFET - Power, SingleN-Channel100 V, 10.6 mW, 57.8 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS010N10MCLTAG - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable10.6 mW @ 10 V100 V 57.8

 7.1. Size:201K  onsemi
nvtfs015n04c.pdf pdf_icon

NVTFS010N10MCL

NVTFS015N04CMOSFET Power, SingleN-Channel40 V, 17.3 mW, 27 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS015N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 17.3 mW @ 10 V 27 A These

 7.2. Size:268K  onsemi
nvtfs016n06c.pdf pdf_icon

NVTFS010N10MCL

MOSFET - Power, SingleN-Channel, m8FL60 V, 16.3 mW, 32 ANVTFS016N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS016N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(on) MAX ID MAXInspection60 V 16.3 mW @ 10 V 32 A AEC-

 7.3. Size:217K  onsemi
nvtfs014p04m8l.pdf pdf_icon

NVTFS010N10MCL

MOSFET Power, Single,P-Channel-40 V, 13.8 mW, -49 ANVTFS014P04M8LFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS014P04M8L - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable13.8 mW @ -10 V These D

Datasheet: NVMYS4D6N04CL , NVR5124PL , NVTFS002N04C , NVTFS002N04CL , NVTFS003N04C , NVTFS004N04C , NVTFS005N04C , NVTFS008N04C , EMB04N03H , NVTFS014P04M8L , NVTFS015N04C , NVTFS016N06C , NVTFS020N06C , NVTFS024N06C , NVTFS030N06C , NVTFS052P04M8L , NVTFS5C453NL .

History: AM3457PE | PD485BA | SIHFB9N65A | SUM110N08-07P | HMS4264 | PMCM6501UPE | CS12N10

Keywords - NVTFS010N10MCL MOSFET datasheet

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