NVTFS5C658NL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVTFS5C658NL 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 114 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 109 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 96 nS
Cossⓘ - Capacitancia de salida: 890 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Encapsulados: WDFN8
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NVTFS5C658NL datasheet
nvtfs5c658nl.pdf
NVTFS5C658NL Power MOSFET 60 V, 5.0 mW, 109 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 5.0 mW @ 10 V These Devices are Pb
nvtfs5c680nl.pdf
NVTFS5C680NL MOSFET Power, Single N-Channel 60 V, 26.5 mW, 20 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5C680NLWF - Wettable Flanks Product 26.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 60 V 20 A The
nvtfs5c673nl.pdf
NVTFS5C673NL Power MOSFET 60 V, 9.8 mW, 50 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C673NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro
nvtfs5c670nl.pdf
NVTFS5C670NL Power MOSFET 60 V, 6.8 mW, 70 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C670NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro
Otros transistores... NVTFS030N06C, NVTFS052P04M8L, NVTFS5C453NL, NVTFS5C454NL, NVTFS5C460NL, NVTFS5C466NL, NVTFS5C471NL, NVTFS5C478NL, IRF740, NVTFS5C670NL, NVTFS5C673NL, NVTFS5C680NL, NVTFS6H850N, NVTFS6H850NL, NVTFS6H854N, NVTFS6H854NL, NVTFS6H860N
Parámetros del MOSFET. Cómo se afectan entre sí.
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