NVTFS5C658NL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NVTFS5C658NL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 114 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 109 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 96 ns
Cossⓘ - Выходная емкость: 890 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NVTFS5C658NL
NVTFS5C658NL Datasheet (PDF)
nvtfs5c658nl.pdf

NVTFS5C658NLPower MOSFET60 V, 5.0 mW, 109 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable5.0 mW @ 10 V These Devices are Pb
nvtfs5c680nl.pdf

NVTFS5C680NLMOSFET Power, SingleN-Channel60 V, 26.5 mW, 20 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C680NLWF - Wettable Flanks Product26.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable60 V 20 A The
nvtfs5c673nl.pdf

NVTFS5C673NLPower MOSFET60 V, 9.8 mW, 50 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C673NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro
nvtfs5c670nl.pdf

NVTFS5C670NLPower MOSFET60 V, 6.8 mW, 70 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C670NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro
Другие MOSFET... NVTFS030N06C , NVTFS052P04M8L , NVTFS5C453NL , NVTFS5C454NL , NVTFS5C460NL , NVTFS5C466NL , NVTFS5C471NL , NVTFS5C478NL , IRF840 , NVTFS5C670NL , NVTFS5C673NL , NVTFS5C680NL , NVTFS6H850N , NVTFS6H850NL , NVTFS6H854N , NVTFS6H854NL , NVTFS6H860N .
History: STS3420 | MTP2N40 | 2SK3019TT1 | MS40N06 | ZXMP6A13G | FCB070N65S3 | RJK0317DSP
History: STS3420 | MTP2N40 | 2SK3019TT1 | MS40N06 | ZXMP6A13G | FCB070N65S3 | RJK0317DSP



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
c1841 transistor | fb42n20d | irfb3306 equivalent | irfp460 характеристики | k2837 datasheet | k389 transistor | mje15032g equivalent | nsd134