NVTFS5C680NL Todos los transistores

 

NVTFS5C680NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVTFS5C680NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 161 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0265 Ohm

Encapsulados: WDFN8

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NVTFS5C680NL datasheet

 ..1. Size:199K  onsemi
 nvtfs5c680nl.pdf pdf_icon

NVTFS5C680NL

NVTFS5C680NL MOSFET Power, Single N-Channel 60 V, 26.5 mW, 20 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5C680NLWF - Wettable Flanks Product 26.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 60 V 20 A The

 6.1. Size:208K  onsemi
 nvtfs5c673nl.pdf pdf_icon

NVTFS5C680NL

NVTFS5C673NL Power MOSFET 60 V, 9.8 mW, 50 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C673NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

 6.2. Size:204K  onsemi
 nvtfs5c670nl.pdf pdf_icon

NVTFS5C680NL

NVTFS5C670NL Power MOSFET 60 V, 6.8 mW, 70 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C670NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

 6.3. Size:200K  onsemi
 nvtfs5c658nl.pdf pdf_icon

NVTFS5C680NL

NVTFS5C658NL Power MOSFET 60 V, 5.0 mW, 109 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 5.0 mW @ 10 V These Devices are Pb

MOSTRAR MÁS

Otros transistores... NVTFS5C454NL , NVTFS5C460NL , NVTFS5C466NL , NVTFS5C471NL , NVTFS5C478NL , NVTFS5C658NL , NVTFS5C670NL , NVTFS5C673NL , IRF540 , NVTFS6H850N , NVTFS6H850NL , NVTFS6H854N , NVTFS6H854NL , NVTFS6H860N , NVTFS6H860NL , NVTFS6H880N , NVTFS6H880NL .

 

 

 

 

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