NVTFS5C680NL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NVTFS5C680NL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 161 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0265 Ohm
Тип корпуса: WDFN8
- подбор MOSFET транзистора по параметрам
NVTFS5C680NL Datasheet (PDF)
nvtfs5c680nl.pdf

NVTFS5C680NLMOSFET Power, SingleN-Channel60 V, 26.5 mW, 20 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C680NLWF - Wettable Flanks Product26.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable60 V 20 A The
nvtfs5c673nl.pdf

NVTFS5C673NLPower MOSFET60 V, 9.8 mW, 50 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C673NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro
nvtfs5c670nl.pdf

NVTFS5C670NLPower MOSFET60 V, 6.8 mW, 70 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C670NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro
nvtfs5c658nl.pdf

NVTFS5C658NLPower MOSFET60 V, 5.0 mW, 109 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable5.0 mW @ 10 V These Devices are Pb
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IPB020N08N5 | WMJ38N60C2 | BF247A | OSG60R900FF | AO6804A | NTHD3102C | JCS2N60FB
History: IPB020N08N5 | WMJ38N60C2 | BF247A | OSG60R900FF | AO6804A | NTHD3102C | JCS2N60FB



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