NVTFS6H850N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVTFS6H850N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 107 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 68 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 175 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm

Encapsulados: WDFN8

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NVTFS6H850N datasheet

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 nvtfs6h850n.pdf pdf_icon

NVTFS6H850N

MOSFET Power, Single N-Channel 80 V, 9.5 mW, 68 A NVTFS6H850N Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H850NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 80 V 9.5 mW @ 10 V 68 A These De

 0.1. Size:182K  onsemi
 nvtfs6h850nl.pdf pdf_icon

NVTFS6H850N

NVTFS6H850NL Power MOSFET 80 V, 8.6 mW, 64 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS6H850NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

 5.1. Size:199K  onsemi
 nvtfs6h854n.pdf pdf_icon

NVTFS6H850N

MOSFET - Power, Single N-Channel 80 V, 14.5 mW, 48 A NVTFS6H854N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H854NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 14.5 mW @ 10 V 48 A These De

 5.2. Size:267K  onsemi
 nvtfs6h854nl.pdf pdf_icon

NVTFS6H850N

MOSFET - Power, Single N-Channel 80 V, 13.4 mW, 41 A NVTFS6H854NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H854NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 13.4 mW @ 10 V These Devices ar

MOSTRAR MÁS

Otros transistores... NVTFS5C460NL, NVTFS5C466NL, NVTFS5C471NL, NVTFS5C478NL, NVTFS5C658NL, NVTFS5C670NL, NVTFS5C673NL, NVTFS5C680NL, 50N06, NVTFS6H850NL, NVTFS6H854N, NVTFS6H854NL, NVTFS6H860N, NVTFS6H860NL, NVTFS6H880N, NVTFS6H880NL, NVTFS6H888N