NVTFS6H850N Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NVTFS6H850N
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 107 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 68 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 32 ns
Cossⓘ - Выходная емкость: 175 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NVTFS6H850N
NVTFS6H850N Datasheet (PDF)
nvtfs6h850n.pdf

MOSFET Power, SingleN-Channel80 V, 9.5 mW, 68 ANVTFS6H850NFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H850NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable80 V 9.5 mW @ 10 V 68 A These De
nvtfs6h850nl.pdf

NVTFS6H850NLPower MOSFET80 V, 8.6 mW, 64 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS6H850NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro
nvtfs6h854n.pdf

MOSFET - Power, SingleN-Channel80 V, 14.5 mW, 48 ANVTFS6H854NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H854NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 14.5 mW @ 10 V 48 A These De
nvtfs6h854nl.pdf

MOSFET - Power, SingleN-Channel80 V, 13.4 mW, 41 ANVTFS6H854NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H854NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable13.4 mW @ 10 V These Devices ar
Другие MOSFET... NVTFS5C460NL , NVTFS5C466NL , NVTFS5C471NL , NVTFS5C478NL , NVTFS5C658NL , NVTFS5C670NL , NVTFS5C673NL , NVTFS5C680NL , 50N06 , NVTFS6H850NL , NVTFS6H854N , NVTFS6H854NL , NVTFS6H860N , NVTFS6H860NL , NVTFS6H880N , NVTFS6H880NL , NVTFS6H888N .
History: IPD127N06L | PSMN017-30EL | XN0NE92 | SSF11NS60UF | NTD4805NT4G | STB11NM80T4 | NCEP85T15
History: IPD127N06L | PSMN017-30EL | XN0NE92 | SSF11NS60UF | NTD4805NT4G | STB11NM80T4 | NCEP85T15



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