NVTFS6H850NL Todos los transistores

 

NVTFS6H850NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVTFS6H850NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 64 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 182 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm
   Paquete / Cubierta: WDFN8
 

 Búsqueda de reemplazo de NVTFS6H850NL MOSFET

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Principales características: NVTFS6H850NL

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NVTFS6H850NL

NVTFS6H850NL Power MOSFET 80 V, 8.6 mW, 64 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS6H850NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

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NVTFS6H850NL

MOSFET Power, Single N-Channel 80 V, 9.5 mW, 68 A NVTFS6H850N Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H850NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 80 V 9.5 mW @ 10 V 68 A These De

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NVTFS6H850NL

MOSFET - Power, Single N-Channel 80 V, 14.5 mW, 48 A NVTFS6H854N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H854NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 14.5 mW @ 10 V 48 A These De

 5.2. Size:267K  onsemi
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NVTFS6H850NL

MOSFET - Power, Single N-Channel 80 V, 13.4 mW, 41 A NVTFS6H854NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H854NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 13.4 mW @ 10 V These Devices ar

MOSTRAR MÁS

Otros transistores... NVTFS5C466NL , NVTFS5C471NL , NVTFS5C478NL , NVTFS5C658NL , NVTFS5C670NL , NVTFS5C673NL , NVTFS5C680NL , NVTFS6H850N , IRFP460 , NVTFS6H854N , NVTFS6H854NL , NVTFS6H860N , NVTFS6H860NL , NVTFS6H880N , NVTFS6H880NL , NVTFS6H888N , NVTFS6H888NL .

 

 
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