NVTFS6H854N Todos los transistores

 

NVTFS6H854N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVTFS6H854N

Código: 854N_54NW

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 68 W

Tensión drenaje-fuente |Vds|: 80 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 44 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 13 nC

Tiempo de elevación (tr): 22 nS

Conductancia de drenaje-sustrato (Cd): 113 pF

Resistencia drenaje-fuente RDS(on): 0.0145 Ohm

Empaquetado / Estuche: WDFN8

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NVTFS6H854N Datasheet (PDF)

0.1. nvtfs6h854nl.pdf Size:267K _onsemi

NVTFS6H854N
NVTFS6H854N

MOSFET - Power, SingleN-Channel80 V, 13.4 mW, 41 ANVTFS6H854NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H854NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable13.4 mW @ 10 V These Devices ar

0.2. nvtfs6h854n.pdf Size:199K _onsemi

NVTFS6H854N
NVTFS6H854N

MOSFET - Power, SingleN-Channel80 V, 14.5 mW, 48 ANVTFS6H854NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H854NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 14.5 mW @ 10 V 48 A These De

 5.1. nvtfs6h850n.pdf Size:197K _onsemi

NVTFS6H854N
NVTFS6H854N

MOSFET Power, SingleN-Channel80 V, 9.5 mW, 68 ANVTFS6H850NFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H850NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable80 V 9.5 mW @ 10 V 68 A These De

5.2. nvtfs6h850nl.pdf Size:182K _onsemi

NVTFS6H854N
NVTFS6H854N

NVTFS6H850NLPower MOSFET80 V, 8.6 mW, 64 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS6H850NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

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