NVTFS6H888N Todos los transistores

 

NVTFS6H888N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVTFS6H888N

Código: 888N_88NW

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 18 W

Tensión drenaje-fuente |Vds|: 80 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 12 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 4.7 nC

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 35 pF

Resistencia drenaje-fuente RDS(on): 0.055 Ohm

Empaquetado / Estuche: WDFN8

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NVTFS6H888N Datasheet (PDF)

0.1. nvtfs6h888n.pdf Size:202K _onsemi

NVTFS6H888N
NVTFS6H888N

MOSFET - Power, SingleN-Channel80 V, 55 mW, 13 ANVTFS6H888NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H888NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 55 mW @ 10 V 13 A These Device

0.2. nvtfs6h888nl.pdf Size:267K _onsemi

NVTFS6H888N
NVTFS6H888N

MOSFET - Power, SingleN-Channel80 V, 50 mW, 14 ANVTFS6H888NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H888NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 50 mW @ 10 V80 V14 A These Dev

 5.1. nvtfs6h880nl.pdf Size:265K _onsemi

NVTFS6H888N
NVTFS6H888N

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANVTFS6H880NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V80 V22 A These Devi

5.2. nvtfs6h880n.pdf Size:198K _onsemi

NVTFS6H888N
NVTFS6H888N

MOSFET - Power, SingleN-Channel80 V, 32 mW, 22 ANVTFS6H880NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H880NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 32 mW @ 10 V 22 A These Device

Otros transistores... CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , IRFZ44A , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 .

 

 
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