NVTFS6H888N
MOSFET. Datasheet pdf. Equivalent
Type Designator: NVTFS6H888N
Marking Code: 888N_88NW
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 18
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 4.7
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 35
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
WDFN8
NVTFS6H888N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVTFS6H888N
Datasheet (PDF)
..1. Size:202K onsemi
nvtfs6h888n.pdf 
MOSFET - Power, SingleN-Channel80 V, 55 mW, 13 ANVTFS6H888NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H888NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 55 mW @ 10 V 13 A These Device
0.1. Size:267K onsemi
nvtfs6h888nl.pdf
MOSFET - Power, SingleN-Channel80 V, 50 mW, 14 ANVTFS6H888NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H888NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 50 mW @ 10 V80 V14 A These Dev
5.1. Size:265K onsemi
nvtfs6h880nl.pdf
MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANVTFS6H880NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V80 V22 A These Devi
5.2. Size:198K onsemi
nvtfs6h880n.pdf
MOSFET - Power, SingleN-Channel80 V, 32 mW, 22 ANVTFS6H880NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H880NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 32 mW @ 10 V 22 A These Device
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