NVTFS6H888N MOSFET Datasheet: N-Ch, 80V, 12A. Full specification with pinout and replacement list

NVTFS6H888N Specs and Replacement

Type Designator: NVTFS6H888N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 35 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: WDFN8

NVTFS6H888N substitution

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NVTFS6H888N datasheet

..1. Size:202K onsemi
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MOSFET - Power, Single N-Channel 80 V, 55 mW, 13 A NVTFS6H888N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H888NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 55 mW @ 10 V 13 A These Device... See More ⇒

0.1. Size:267K onsemi
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MOSFET - Power, Single N-Channel 80 V, 50 mW, 14 A NVTFS6H888NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS6H888NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 50 mW @ 10 V 80 V 14 A These Dev... See More ⇒

5.1. Size:265K onsemi
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MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NVTFS6H880NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V 80 V 22 A These Devi... See More ⇒

5.2. Size:198K onsemi
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MOSFET - Power, Single N-Channel 80 V, 32 mW, 22 A NVTFS6H880N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H880NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 32 mW @ 10 V 22 A These Device... See More ⇒

Detailed specifications: NVTFS6H850N , NVTFS6H850NL , NVTFS6H854N , NVTFS6H854NL , NVTFS6H860N , NVTFS6H860NL , NVTFS6H880N , NVTFS6H880NL , IRFP260N , NVTFS6H888NL , NVTFS9D6P04M8L , STD25P03L , PJM02N60SA , PJM07P20SA , PJM10H03NSC , PJM138NSA , PJM2300NSA .