NVTFS9D6P04M8L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOSFET - Power, SingleP-Channel-40 V, 9.5 mW, -64 ANVTFS9D6P04M8LFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS9D6P04M8L - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable9.5 mW @ -10 V These Device

MOSFET - Power, SingleN-Channel80 V, 14.5 mW, 48 ANVTFS6H854NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H854NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 14.5 mW @ 10 V 48 A These De

MOSFET - Power, SingleN-Channel80 V, 21.1 mW, 33 ANVTFS6H860NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H860NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 21.1 mW @ 10 V 33 A These De

NVTFS5116PLPower MOSFET-60 V, -14 A, 52 mW, Single P-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb

NVTFS002N04CMOSFET Power, SingleN-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS002N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 2.4 mW @ 10 V 136 A These

NVTFS010N10MCLMOSFET - Power, SingleN-Channel100 V, 10.6 mW, 57.8 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS010N10MCLTAG - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable10.6 mW @ 10 V100 V 57.8

NVTFS4C25NPower MOSFET30 V, 17 mW, 22 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring

MOSFET Power, SingleN-Channel40 V, 3.1 mW, 107 ANVTFS5C453NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS5C453NLWF - Wettable Flanks Product3.1 mW @ 10 V40 V107 A AEC-Q101 Qualified and PPAP Capable5.2 mW

NVTFS4C06NPower MOSFET30 V, 4.2 mW, 71 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C06NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring4.2 mW @ 1

NVTFS003N04CMOSFET Power, SingleN-Channel40 V, 3.5 mW, 103 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS003N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 3.5 mW @ 10 V 103 A These

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANVTFS6H880NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V80 V22 A These Devi

NVTFS5826NLPower MOSFET60 V, 24 mW, 20 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb-F

NVTFS5C680NLMOSFET Power, SingleN-Channel60 V, 26.5 mW, 20 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C680NLWF - Wettable Flanks Product26.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable60 V 20 A The

NVTFS4824NPower MOSFET30 V, 4.7 mW, 46 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses NVTFS4824NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable4.7 mW @ 10 V These Devices are Pb-F

NVTFS4C13NPower MOSFET30 V, 9.4 mW, 40 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring9.4 mW @ 1

NVTFS5C454NLPower MOSFET40 V, 4.0 mW, 85 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C454NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

NVTFS015N04CMOSFET Power, SingleN-Channel40 V, 17.3 mW, 27 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS015N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 17.3 mW @ 10 V 27 A These

NVTFS5116PLMOSFET Power, SingleP-Channel-60 V, -14 A, 52 mWFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5116PLWF - Wettable Flanks Product52 mW @ -10 V-60 V -14 A AEC-Q101 Qualified and PPAP Capable72 mW

MOSFET Power, SingleN-Channel40 V, 9.0 mW, 41 ANVTFS5C471NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C471NLWF - Wettable Flanks Product9.0 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 41 A These

NVTFS4C08NPower MOSFET30 V, 5.9 mW, 55 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C08NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring5.9 mW @ 1

NVTFS4C10NPower MOSFET30 V, 7.4 mW, 47 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C10NWF - Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring7.4 mW @ 1

MOSFET - Power, SingleP-Channel-40 V, 69 mW, -13.2 ANVTFS052P04M8LFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS052P04M8L - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable69 mW @ -10 V These Device

NVTFS008N04CPower MOSFET40 V, 7.1 mW, 48 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS008N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH

NVTFS5811NLMOSFET Power, SingleN-Channel40 V, 6.7 mW, 40 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5811NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 6.7 mW @ 10 V40 V 40 A These

MOSFET - Power, SingleN-Channel80 V, 20 mW, 30 ANVTFS6H860NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H860NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable20 mW @ 10 V80 V 30 A These Devi

MOSFET - Power, SingleN-Channel80 V, 32 mW, 22 ANVTFS6H880NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H880NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 32 mW @ 10 V 22 A These Device

MOSFET Power, SingleN-Channel40 V, 4.8 mW, 74 ANVTFS5C460NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C460NLWF - Wettable Flanks Product4.8 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 74 A These

NVTFS4C05NPower MOSFET30 V, 3.6 mW, 102 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C05NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring3.6 mW @

NVTFS5C466NLMOSFET - Power, SingleN-Channel40 V, 7.3 mW, 51 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C466NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable7.3 mW @ 10 V These Devices are

NVTFS5826NLPower MOSFET60 V, 24 mW, 20 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5826NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable24 mW @ 10 V These Devices are Pb-F

NVTFS5811NLPower MOSFET40 V, 6.7 mW, 40 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb-

NVTFS6H850NLPower MOSFET80 V, 8.6 mW, 64 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS6H850NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

MOSFET - Power, SingleN-Channel, m8FL60 V, 22.6 mW, 24 ANVTFS024N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS024N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 22.6 mW @ 10 V 24 A AEC-

MOSFET - Power, SingleN-Channel80 V, 13.4 mW, 41 ANVTFS6H854NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H854NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable13.4 mW @ 10 V These Devices ar

NVTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS005N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH

MOSFET - Power, SingleN-Channel, m8FL60 V, 16.3 mW, 32 ANVTFS016N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS016N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(on) MAX ID MAXInspection60 V 16.3 mW @ 10 V 32 A AEC-

NVTFS5124PLPower MOSFET-60 V, -6 A, 260 mW, Single P-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified These are Pb-Free Devices260 mW @ -10 V-60 V -6 AMAXIMUM RATINGS (TJ = 25C unless

MOSFET Power, Single,P-Channel-40 V, 13.8 mW, -49 ANVTFS014P04M8LFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS014P04M8L - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable13.8 mW @ -10 V These D

MOSFET - Power, SingleN-Channel, m8FL60 V, 29.7 mW, 19 ANVTFS030N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS030N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(on) MAX ID MAXInspection60 V 29.7 mW @ 10 V 19 A AEC-

NVTFS5C673NLPower MOSFET60 V, 9.8 mW, 50 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C673NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

NVTFS5C670NLPower MOSFET60 V, 6.8 mW, 70 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C670NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

NVTFS5820NLPower MOSFET60 V, 11.5 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 QualifiedV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices*11.5 mW @ 10 V60 V 29 AMAXIMUM RATINGS (TJ = 25C unless o

NVTFS002N04CLMOSFET Power, SingleN-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS002N04CL - Wettable Flanks Product2.2 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 142 A3.5 mW

MOSFET - Power, SingleN-Channel, m8FL60 V, 20.3 mW, 27 ANVTFS020N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS020N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(on) MAX ID MAXInspection60 V 20.3 mW @ 10 V 27 A AEC-

NVTFS5C658NLPower MOSFET60 V, 5.0 mW, 109 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable5.0 mW @ 10 V These Devices are Pb

MOSFET Power, SingleN-Channel80 V, 9.5 mW, 68 ANVTFS6H850NFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H850NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable80 V 9.5 mW @ 10 V 68 A These De

MOSFET - Power, SingleN-Channel80 V, 50 mW, 14 ANVTFS6H888NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H888NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 50 mW @ 10 V80 V14 A These Dev

NVTFS004N04CMOSFET Power, SingleN-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS004N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 4.9 mW @ 10 V 77 A These De

NVTFS4823NPower MOSFET30 V, 10.5 mW, 30 A, Single N-ChannelFeatures Small Footprint (3.3x3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NV Prefix for Automotive and Other Applications Requiring10.5 mW @ 10 VAEC-Q101 Qualified Site and Change Controls30

MOSFET Power, SingleN-Channel40 V, 14 mW, 26 ANVTFS5C478NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C478NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable14 mW @ 10 V These Devices are

MOSFET - Power, SingleN-Channel80 V, 55 mW, 13 ANVTFS6H888NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H888NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 55 mW @ 10 V 13 A These Device