Справочник MOSFET. NVTFS9D6P04M8L

 

NVTFS9D6P04M8L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: NVTFS9D6P04M8L

Маркировка: 9D6M

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 75 W

Предельно допустимое напряжение сток-исток |Uds|: 40 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 2.4 V

Максимально допустимый постоянный ток стока |Id|: 64 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 34.6 nC

Время нарастания (tr): 91.5 ns

Выходная емкость (Cd): 923 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0095 Ohm

Тип корпуса: WDFN8

Аналог (замена) для NVTFS9D6P04M8L

 

 

NVTFS9D6P04M8L Datasheet (PDF)

0.1. nvtfs9d6p04m8l.pdf Size:214K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET - Power, SingleP-Channel-40 V, 9.5 mW, -64 ANVTFS9D6P04M8LFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS9D6P04M8L - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable9.5 mW @ -10 V These Device

9.1. nvtfs4c25n.pdf Size:82K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS4C25NPower MOSFET30 V, 17 mW, 22 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring

9.2. nvtfs5c471nl.pdf Size:270K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET Power, SingleN-Channel40 V, 9.0 mW, 41 ANVTFS5C471NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C471NLWF - Wettable Flanks Product9.0 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 41 A These

 9.3. nvtfs4823n-d.pdf Size:112K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS4823NPower MOSFET30 V, 10.5 mW, 30 A, Single N-ChannelFeatures Small Footprint (3.3x3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NV Prefix for Automotive and Other Applications Requiring10.5 mW @ 10 VAEC-Q101 Qualified Site and Change Controls30

9.4. nvtfs4c08n.pdf Size:82K _onsemi

NVTFS9D6P04M8L
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NVTFS4C08NPower MOSFET30 V, 5.9 mW, 55 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C08NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring5.9 mW @ 1

 9.5. nvtfs6h860n.pdf Size:198K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET - Power, SingleN-Channel80 V, 21.1 mW, 33 ANVTFS6H860NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H860NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 21.1 mW @ 10 V 33 A These De

9.6. nvtfs4c10n.pdf Size:78K _onsemi

NVTFS9D6P04M8L
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NVTFS4C10NPower MOSFET30 V, 7.4 mW, 47 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C10NWF - Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring7.4 mW @ 1

9.7. nvtfs5811nl-d.pdf Size:112K _onsemi

NVTFS9D6P04M8L
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NVTFS5811NLPower MOSFET40 V, 6.7 mW, 40 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb-

9.8. nvtfs5c670nl.pdf Size:204K _onsemi

NVTFS9D6P04M8L
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NVTFS5C670NLPower MOSFET60 V, 6.8 mW, 70 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C670NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

9.9. nvtfs014p04m8l.pdf Size:217K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET Power, Single,P-Channel-40 V, 13.8 mW, -49 ANVTFS014P04M8LFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS014P04M8L - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable13.8 mW @ -10 V These D

9.10. nvtfs5826nl-d.pdf Size:111K _onsemi

NVTFS9D6P04M8L
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NVTFS5826NLPower MOSFET60 V, 24 mW, 20 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb-F

9.11. nvtfs5c658nl.pdf Size:200K _onsemi

NVTFS9D6P04M8L
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NVTFS5C658NLPower MOSFET60 V, 5.0 mW, 109 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable5.0 mW @ 10 V These Devices are Pb

9.12. nvtfs6h888n.pdf Size:202K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET - Power, SingleN-Channel80 V, 55 mW, 13 ANVTFS6H888NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H888NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 55 mW @ 10 V 13 A These Device

9.13. nvtfs5c454nl.pdf Size:183K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS5C454NLPower MOSFET40 V, 4.0 mW, 85 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C454NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

9.14. nvtfs002n04cl.pdf Size:266K _onsemi

NVTFS9D6P04M8L
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NVTFS002N04CLMOSFET Power, SingleN-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS002N04CL - Wettable Flanks Product2.2 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 142 A3.5 mW

9.15. nvtfs5c680nl.pdf Size:199K _onsemi

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NVTFS5C680NLMOSFET Power, SingleN-Channel60 V, 26.5 mW, 20 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C680NLWF - Wettable Flanks Product26.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable60 V 20 A The

9.16. nvtfs5820nl-d.pdf Size:116K _onsemi

NVTFS9D6P04M8L
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NVTFS5820NLPower MOSFET60 V, 11.5 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 QualifiedV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices*11.5 mW @ 10 V60 V 29 AMAXIMUM RATINGS (TJ = 25C unless o

9.17. nvtfs024n06c.pdf Size:269K _onsemi

NVTFS9D6P04M8L
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MOSFET - Power, SingleN-Channel, m8FL60 V, 22.6 mW, 24 ANVTFS024N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS024N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 22.6 mW @ 10 V 24 A AEC-

9.18. nvtfs010n10mcl.pdf Size:320K _onsemi

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NVTFS010N10MCLMOSFET - Power, SingleN-Channel100 V, 10.6 mW, 57.8 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS010N10MCLTAG - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable10.6 mW @ 10 V100 V 57.8

9.19. nvtfs4824n.pdf Size:123K _onsemi

NVTFS9D6P04M8L
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NVTFS4824NPower MOSFET30 V, 4.7 mW, 46 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses NVTFS4824NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable4.7 mW @ 10 V These Devices are Pb-F

9.20. nvtfs002n04c.pdf Size:267K _onsemi

NVTFS9D6P04M8L
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NVTFS002N04CMOSFET Power, SingleN-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS002N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 2.4 mW @ 10 V 136 A These

9.21. nvtfs6h880nl.pdf Size:265K _onsemi

NVTFS9D6P04M8L
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MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANVTFS6H880NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V80 V22 A These Devi

9.22. nvtfs5c453nl.pdf Size:193K _onsemi

NVTFS9D6P04M8L
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MOSFET Power, SingleN-Channel40 V, 3.1 mW, 107 ANVTFS5C453NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS5C453NLWF - Wettable Flanks Product3.1 mW @ 10 V40 V107 A AEC-Q101 Qualified and PPAP Capable5.2 mW

9.23. nvtfs016n06c.pdf Size:268K _onsemi

NVTFS9D6P04M8L
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MOSFET - Power, SingleN-Channel, m8FL60 V, 16.3 mW, 32 ANVTFS016N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS016N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(on) MAX ID MAXInspection60 V 16.3 mW @ 10 V 32 A AEC-

9.24. nvtfs5c673nl.pdf Size:208K _onsemi

NVTFS9D6P04M8L
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NVTFS5C673NLPower MOSFET60 V, 9.8 mW, 50 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C673NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

9.25. nvtfs008n04c.pdf Size:184K _onsemi

NVTFS9D6P04M8L
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NVTFS008N04CPower MOSFET40 V, 7.1 mW, 48 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS008N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH

9.26. nvtfs003n04c.pdf Size:200K _onsemi

NVTFS9D6P04M8L
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NVTFS003N04CMOSFET Power, SingleN-Channel40 V, 3.5 mW, 103 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS003N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 3.5 mW @ 10 V 103 A These

9.27. nvtfs5c460nl.pdf Size:195K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET Power, SingleN-Channel40 V, 4.8 mW, 74 ANVTFS5C460NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C460NLWF - Wettable Flanks Product4.8 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 74 A These

9.28. nvtfs015n04c.pdf Size:201K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS015N04CMOSFET Power, SingleN-Channel40 V, 17.3 mW, 27 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS015N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 17.3 mW @ 10 V 27 A These

9.29. nvtfs6h888nl.pdf Size:267K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET - Power, SingleN-Channel80 V, 50 mW, 14 ANVTFS6H888NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H888NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 50 mW @ 10 V80 V14 A These Dev

9.30. nvtfs5116pl-d.pdf Size:116K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS5116PLPower MOSFET-60 V, -14 A, 52 mW, Single P-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb

9.31. nvtfs6h850n.pdf Size:197K _onsemi

NVTFS9D6P04M8L
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MOSFET Power, SingleN-Channel80 V, 9.5 mW, 68 ANVTFS6H850NFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H850NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable80 V 9.5 mW @ 10 V 68 A These De

9.32. nvtfs005n04c.pdf Size:192K _onsemi

NVTFS9D6P04M8L
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NVTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS005N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH

9.33. nvtfs6h854nl.pdf Size:267K _onsemi

NVTFS9D6P04M8L
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MOSFET - Power, SingleN-Channel80 V, 13.4 mW, 41 ANVTFS6H854NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H854NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable13.4 mW @ 10 V These Devices ar

9.34. nvtfs020n06c.pdf Size:268K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET - Power, SingleN-Channel, m8FL60 V, 20.3 mW, 27 ANVTFS020N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS020N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(on) MAX ID MAXInspection60 V 20.3 mW @ 10 V 27 A AEC-

9.35. nvtfs6h850nl.pdf Size:182K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS6H850NLPower MOSFET80 V, 8.6 mW, 64 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS6H850NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

9.36. nvtfs6h860nl.pdf Size:265K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET - Power, SingleN-Channel80 V, 20 mW, 30 ANVTFS6H860NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H860NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable20 mW @ 10 V80 V 30 A These Devi

9.37. nvtfs5c478nl.pdf Size:198K _onsemi

NVTFS9D6P04M8L
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MOSFET Power, SingleN-Channel40 V, 14 mW, 26 ANVTFS5C478NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C478NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable14 mW @ 10 V These Devices are

9.38. nvtfs5116pl.pdf Size:195K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS5116PLMOSFET Power, SingleP-Channel-60 V, -14 A, 52 mWFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5116PLWF - Wettable Flanks Product52 mW @ -10 V-60 V -14 A AEC-Q101 Qualified and PPAP Capable72 mW

9.39. nvtfs4c13n.pdf Size:80K _onsemi

NVTFS9D6P04M8L
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NVTFS4C13NPower MOSFET30 V, 9.4 mW, 40 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring9.4 mW @ 1

9.40. nvtfs5826nl.pdf Size:119K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS5826NLPower MOSFET60 V, 24 mW, 20 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5826NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable24 mW @ 10 V These Devices are Pb-F

9.41. nvtfs5c466nl.pdf Size:209K _onsemi

NVTFS9D6P04M8L
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NVTFS5C466NLMOSFET - Power, SingleN-Channel40 V, 7.3 mW, 51 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C466NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable7.3 mW @ 10 V These Devices are

9.42. nvtfs052p04m8l.pdf Size:206K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET - Power, SingleP-Channel-40 V, 69 mW, -13.2 ANVTFS052P04M8LFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS052P04M8L - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable69 mW @ -10 V These Device

9.43. nvtfs4c05n.pdf Size:75K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS4C05NPower MOSFET30 V, 3.6 mW, 102 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C05NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring3.6 mW @

9.44. nvtfs4c06n.pdf Size:81K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS4C06NPower MOSFET30 V, 4.2 mW, 71 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C06NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring4.2 mW @ 1

9.45. nvtfs6h854n.pdf Size:199K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET - Power, SingleN-Channel80 V, 14.5 mW, 48 ANVTFS6H854NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H854NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 14.5 mW @ 10 V 48 A These De

9.46. nvtfs5811nl.pdf Size:190K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS5811NLMOSFET Power, SingleN-Channel40 V, 6.7 mW, 40 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5811NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 6.7 mW @ 10 V40 V 40 A These

9.47. nvtfs004n04c.pdf Size:202K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS004N04CMOSFET Power, SingleN-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS004N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 4.9 mW @ 10 V 77 A These De

9.48. nvtfs6h880n.pdf Size:198K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET - Power, SingleN-Channel80 V, 32 mW, 22 ANVTFS6H880NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H880NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 32 mW @ 10 V 22 A These Device

9.49. nvtfs5124pl.pdf Size:113K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

NVTFS5124PLPower MOSFET-60 V, -6 A, 260 mW, Single P-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified These are Pb-Free Devices260 mW @ -10 V-60 V -6 AMAXIMUM RATINGS (TJ = 25C unless

9.50. nvtfs030n06c.pdf Size:269K _onsemi

NVTFS9D6P04M8L
NVTFS9D6P04M8L

MOSFET - Power, SingleN-Channel, m8FL60 V, 29.7 mW, 19 ANVTFS030N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS030N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(on) MAX ID MAXInspection60 V 29.7 mW @ 10 V 19 A AEC-

Другие MOSFET... CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , IRFZ44A , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 .

 

 
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