NVTFS9D6P04M8L datasheet, подбор замены

 ..1. Size:214K  onsemi
 nvtfs9d6p04m8l.pdf 

MOSFET - Power, Single P-Channel -40 V, 9.5 mW, -64 A NVTFS9D6P04M8L Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS9D6P04M8L - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 9.5 mW @ -10 V These Device

 9.1. Size:199K  onsemi
 nvtfs6h854n.pdf 

MOSFET - Power, Single N-Channel 80 V, 14.5 mW, 48 A NVTFS6H854N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H854NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 14.5 mW @ 10 V 48 A These De

 9.2. Size:198K  onsemi
 nvtfs6h860n.pdf 

MOSFET - Power, Single N-Channel 80 V, 21.1 mW, 33 A NVTFS6H860N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H860NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 21.1 mW @ 10 V 33 A These De

 9.3. Size:116K  onsemi
 nvtfs5116pl-d.pdf 

NVTFS5116PL Power MOSFET -60 V, -14 A, 52 mW, Single P-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com NV Prefix for Automotive and Other Applications Requiring AEC-Q101 Qualified Site and Change Controls V(BR)DSS RDS(on) MAX ID MAX These are Pb

 9.4. Size:267K  onsemi
 nvtfs002n04c.pdf 

NVTFS002N04C MOSFET Power, Single N-Channel 40 V, 2.4 mW, 136 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS002N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 2.4 mW @ 10 V 136 A These

 9.5. Size:320K  onsemi
 nvtfs010n10mcl.pdf 

NVTFS010N10MCL MOSFET - Power, Single N-Channel 100 V, 10.6 mW, 57.8 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFWS010N10MCLTAG - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 10.6 mW @ 10 V 100 V 57.8

 9.6. Size:82K  onsemi
 nvtfs4c25n.pdf 

NVTFS4C25N Power MOSFET 30 V, 17 mW, 22 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product 17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring

 9.7. Size:193K  onsemi
 nvtfs5c453nl.pdf 

MOSFET Power, Single N-Channel 40 V, 3.1 mW, 107 A NVTFS5C453NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS5C453NLWF - Wettable Flanks Product 3.1 mW @ 10 V 40 V 107 A AEC-Q101 Qualified and PPAP Capable 5.2 mW

 9.8. Size:81K  onsemi
 nvtfs4c06n.pdf 

NVTFS4C06N Power MOSFET 30 V, 4.2 mW, 71 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C06NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 4.2 mW @ 1

 9.9. Size:200K  onsemi
 nvtfs003n04c.pdf 

NVTFS003N04C MOSFET Power, Single N-Channel 40 V, 3.5 mW, 103 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS003N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 3.5 mW @ 10 V 103 A These

 9.10. Size:265K  onsemi
 nvtfs6h880nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NVTFS6H880NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V 80 V 22 A These Devi

 9.11. Size:111K  onsemi
 nvtfs5826nl-d.pdf 

NVTFS5826NL Power MOSFET 60 V, 24 mW, 20 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com NV Prefix for Automotive and Other Applications Requiring AEC-Q101 Qualified Site and Change Controls V(BR)DSS RDS(on) MAX ID MAX These are Pb-F

 9.12. Size:199K  onsemi
 nvtfs5c680nl.pdf 

NVTFS5C680NL MOSFET Power, Single N-Channel 60 V, 26.5 mW, 20 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5C680NLWF - Wettable Flanks Product 26.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 60 V 20 A The

 9.13. Size:123K  onsemi
 nvtfs4824n.pdf 

NVTFS4824N Power MOSFET 30 V, 4.7 mW, 46 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses NVTFS4824NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 4.7 mW @ 10 V These Devices are Pb-F

 9.14. Size:80K  onsemi
 nvtfs4c13n.pdf 

NVTFS4C13N Power MOSFET 30 V, 9.4 mW, 40 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 9.4 mW @ 1

 9.15. Size:183K  onsemi
 nvtfs5c454nl.pdf 

NVTFS5C454NL Power MOSFET 40 V, 4.0 mW, 85 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C454NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

 9.16. Size:201K  onsemi
 nvtfs015n04c.pdf 

NVTFS015N04C MOSFET Power, Single N-Channel 40 V, 17.3 mW, 27 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS015N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 17.3 mW @ 10 V 27 A These

 9.17. Size:195K  onsemi
 nvtfs5116pl.pdf 

NVTFS5116PL MOSFET Power, Single P-Channel -60 V, -14 A, 52 mW Features Small Footprint (3.3 x 3.3 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5116PLWF - Wettable Flanks Product 52 mW @ -10 V -60 V -14 A AEC-Q101 Qualified and PPAP Capable 72 mW

 9.18. Size:270K  onsemi
 nvtfs5c471nl.pdf 

MOSFET Power, Single N-Channel 40 V, 9.0 mW, 41 A NVTFS5C471NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5C471NLWF - Wettable Flanks Product 9.0 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 40 V 41 A These

 9.19. Size:82K  onsemi
 nvtfs4c08n.pdf 

NVTFS4C08N Power MOSFET 30 V, 5.9 mW, 55 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C08NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 5.9 mW @ 1

 9.20. Size:78K  onsemi
 nvtfs4c10n.pdf 

NVTFS4C10N Power MOSFET 30 V, 7.4 mW, 47 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS4C10NWF - Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring 7.4 mW @ 1

 9.21. Size:206K  onsemi
 nvtfs052p04m8l.pdf 

MOSFET - Power, Single P-Channel -40 V, 69 mW, -13.2 A NVTFS052P04M8L Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS052P04M8L - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 69 mW @ -10 V These Device

 9.22. Size:184K  onsemi
 nvtfs008n04c.pdf 

NVTFS008N04C Power MOSFET 40 V, 7.1 mW, 48 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS008N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH

 9.23. Size:190K  onsemi
 nvtfs5811nl.pdf 

NVTFS5811NL MOSFET Power, Single N-Channel 40 V, 6.7 mW, 40 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5811NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 6.7 mW @ 10 V 40 V 40 A These

 9.24. Size:265K  onsemi
 nvtfs6h860nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 20 mW, 30 A NVTFS6H860NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H860NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 20 mW @ 10 V 80 V 30 A These Devi

 9.25. Size:198K  onsemi
 nvtfs6h880n.pdf 

MOSFET - Power, Single N-Channel 80 V, 32 mW, 22 A NVTFS6H880N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H880NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 32 mW @ 10 V 22 A These Device

 9.26. Size:195K  onsemi
 nvtfs5c460nl.pdf 

MOSFET Power, Single N-Channel 40 V, 4.8 mW, 74 A NVTFS5C460NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5C460NLWF - Wettable Flanks Product 4.8 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 40 V 74 A These

 9.27. Size:75K  onsemi
 nvtfs4c05n.pdf 

NVTFS4C05N Power MOSFET 30 V, 3.6 mW, 102 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C05NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 3.6 mW @

 9.28. Size:209K  onsemi
 nvtfs5c466nl.pdf 

NVTFS5C466NL MOSFET - Power, Single N-Channel 40 V, 7.3 mW, 51 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C466NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 7.3 mW @ 10 V These Devices are

 9.29. Size:119K  onsemi
 nvtfs5826nl.pdf 

NVTFS5826NL Power MOSFET 60 V, 24 mW, 20 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5826NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 24 mW @ 10 V These Devices are Pb-F

 9.30. Size:112K  onsemi
 nvtfs5811nl-d.pdf 

NVTFS5811NL Power MOSFET 40 V, 6.7 mW, 40 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com NV Prefix for Automotive and Other Applications Requiring AEC-Q101 Qualified Site and Change Controls V(BR)DSS RDS(on) MAX ID MAX These are Pb-

 9.31. Size:182K  onsemi
 nvtfs6h850nl.pdf 

NVTFS6H850NL Power MOSFET 80 V, 8.6 mW, 64 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS6H850NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

 9.32. Size:269K  onsemi
 nvtfs024n06c.pdf 

MOSFET - Power, Single N-Channel, m8FL 60 V, 22.6 mW, 24 A NVTFS024N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFWS024N06C - Wettable Flank Option for Enhanced Optical Inspection 60 V 22.6 mW @ 10 V 24 A AEC-

 9.33. Size:267K  onsemi
 nvtfs6h854nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 13.4 mW, 41 A NVTFS6H854NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H854NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 13.4 mW @ 10 V These Devices ar

 9.34. Size:192K  onsemi
 nvtfs005n04c.pdf 

NVTFS005N04C Power MOSFET 40 V, 5.6 mW, 69 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS005N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH

 9.35. Size:268K  onsemi
 nvtfs016n06c.pdf 

MOSFET - Power, Single N-Channel, m8FL 60 V, 16.3 mW, 32 A NVTFS016N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS016N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(on) MAX ID MAX Inspection 60 V 16.3 mW @ 10 V 32 A AEC-

 9.36. Size:113K  onsemi
 nvtfs5124pl.pdf 

NVTFS5124PL Power MOSFET -60 V, -6 A, 260 mW, Single P-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified These are Pb-Free Devices 260 mW @ -10 V -60 V -6 A MAXIMUM RATINGS (TJ = 25 C unless

 9.37. Size:217K  onsemi
 nvtfs014p04m8l.pdf 

MOSFET Power, Single, P-Channel -40 V, 13.8 mW, -49 A NVTFS014P04M8L Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS014P04M8L - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 13.8 mW @ -10 V These D

 9.38. Size:269K  onsemi
 nvtfs030n06c.pdf 

MOSFET - Power, Single N-Channel, m8FL 60 V, 29.7 mW, 19 A NVTFS030N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS030N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(on) MAX ID MAX Inspection 60 V 29.7 mW @ 10 V 19 A AEC-

 9.39. Size:208K  onsemi
 nvtfs5c673nl.pdf 

NVTFS5C673NL Power MOSFET 60 V, 9.8 mW, 50 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C673NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

 9.40. Size:204K  onsemi
 nvtfs5c670nl.pdf 

NVTFS5C670NL Power MOSFET 60 V, 6.8 mW, 70 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C670NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

 9.41. Size:116K  onsemi
 nvtfs5820nl-d.pdf 

NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N-Channel, m8FL Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices* 11.5 mW @ 10 V 60 V 29 A MAXIMUM RATINGS (TJ = 25 C unless o

 9.42. Size:266K  onsemi
 nvtfs002n04cl.pdf 

NVTFS002N04CL MOSFET Power, Single N-Channel 40 V, 2.2 mW, 142 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFWS002N04CL - Wettable Flanks Product 2.2 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 40 V 142 A 3.5 mW

 9.43. Size:268K  onsemi
 nvtfs020n06c.pdf 

MOSFET - Power, Single N-Channel, m8FL 60 V, 20.3 mW, 27 A NVTFS020N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS020N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(on) MAX ID MAX Inspection 60 V 20.3 mW @ 10 V 27 A AEC-

 9.44. Size:200K  onsemi
 nvtfs5c658nl.pdf 

NVTFS5C658NL Power MOSFET 60 V, 5.0 mW, 109 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 5.0 mW @ 10 V These Devices are Pb

 9.45. Size:197K  onsemi
 nvtfs6h850n.pdf 

MOSFET Power, Single N-Channel 80 V, 9.5 mW, 68 A NVTFS6H850N Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H850NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 80 V 9.5 mW @ 10 V 68 A These De

 9.46. Size:267K  onsemi
 nvtfs6h888nl.pdf 

MOSFET - Power, Single N-Channel 80 V, 50 mW, 14 A NVTFS6H888NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS6H888NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 50 mW @ 10 V 80 V 14 A These Dev

 9.47. Size:202K  onsemi
 nvtfs004n04c.pdf 

NVTFS004N04C MOSFET Power, Single N-Channel 40 V, 4.9 mW, 77 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS004N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 4.9 mW @ 10 V 77 A These De

 9.48. Size:112K  onsemi
 nvtfs4823n-d.pdf 

NVTFS4823N Power MOSFET 30 V, 10.5 mW, 30 A, Single N-Channel Features Small Footprint (3.3x3.3 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NV Prefix for Automotive and Other Applications Requiring 10.5 mW @ 10 V AEC-Q101 Qualified Site and Change Controls 30

 9.49. Size:198K  onsemi
 nvtfs5c478nl.pdf 

MOSFET Power, Single N-Channel 40 V, 14 mW, 26 A NVTFS5C478NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C478NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 14 mW @ 10 V These Devices are

 9.50. Size:202K  onsemi
 nvtfs6h888n.pdf 

MOSFET - Power, Single N-Channel 80 V, 55 mW, 13 A NVTFS6H888N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H888NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 55 mW @ 10 V 13 A These Device