SLF10N65SV - описание и поиск аналогов

 

SLF10N65SV. Аналоги и основные параметры

Наименование производителя: SLF10N65SV

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 54.8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 155 °C

Электрические характеристики

tr ⓘ - Время нарастания: 27 ns

Cossⓘ - Выходная емкость: 118 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.95 Ohm

Тип корпуса: TO220F

Аналог (замена) для SLF10N65SV

- подборⓘ MOSFET транзистора по параметрам

 

SLF10N65SV даташит

 ..1. Size:2068K  maple semi
 slf10n65sv.pdf pdf_icon

SLF10N65SV

SLF10N65SV 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 10A*, 650V, RDS(on),typ =0.81 planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 27nC) has been especially tailored to minimize conduction loss, pro- Fast switching vide superior switching performance, and withstand high en-

 5.1. Size:666K  maple semi
 slp10n65s slf10n65s.pdf pdf_icon

SLF10N65SV

LEAD FREE Pb RoHS SLP10N65S/ SLF10N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ=0.8 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switchi

 6.1. Size:1189K  maple semi
 slp10n65c slf10n65c.pdf pdf_icon

SLF10N65SV

SLP10N65C / SLF10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ. = 0.678 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 38nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi

 6.2. Size:978K  maple semi
 slp10n65a slf10n65a.pdf pdf_icon

SLF10N65SV

LEAD FREE Pb RoHS SLP10N65A/SLF10N65A 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on)Typ = 0.745 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 19nC) This advanced technology has been especially tailored - Low Crss ( typical 5.3pF) to minimize on-state resistance, provide superi

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SLD65R600E7C , SLD80N02TB , SLD8N50UD , SLD8N65SV , SLD90N02TB , SLD90N03TB , SLD95R3K2GTZ , SLE65R1K2E7 , P55NF06 , SLF12N65SV , SLF16N65S , SLF95R760GTZ , SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C , SLH95R130GTZ .

 

 

 

 

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