All MOSFET. SLF10N65SV Datasheet

 

SLF10N65SV Datasheet and Replacement


   Type Designator: SLF10N65SV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 155 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 118 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO220F
 

 SLF10N65SV substitution

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SLF10N65SV Datasheet (PDF)

 ..1. Size:2068K  maple semi
 slf10n65sv.pdf pdf_icon

SLF10N65SV

SLF10N65SV650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 10A*, 650V, RDS(on),typ =0.81planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 27nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-

 5.1. Size:666K  maple semi
 slp10n65s slf10n65s.pdf pdf_icon

SLF10N65SV

LEAD FREEPbRoHSSLP10N65S/ SLF10N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ=0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switchi

 6.1. Size:1189K  maple semi
 slp10n65c slf10n65c.pdf pdf_icon

SLF10N65SV

SLP10N65C / SLF10N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ. = 0.678@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 38nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 6.2. Size:978K  maple semi
 slp10n65a slf10n65a.pdf pdf_icon

SLF10N65SV

LEAD FREEPbRoHSSLP10N65A/SLF10N65A650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on)Typ = 0.745@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 19nC)This advanced technology has been especially tailored - Low Crss ( typical 5.3pF)to minimize on-state resistance, provide superi

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Datasheet: SLD65R600E7C , SLD80N02TB , SLD8N50UD , SLD8N65SV , SLD90N02TB , SLD90N03TB , SLD95R3K2GTZ , SLE65R1K2E7 , 2SK3878 , SLF12N65SV , SLF16N65S , SLF95R760GTZ , SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C , SLH95R130GTZ .

History: FIR10N20LG

Keywords - SLF10N65SV MOSFET datasheet

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