SLF10N65SV Specs and Replacement
Type Designator: SLF10N65SV
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 155 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 118 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO220F
SLF10N65SV substitution
- MOSFET ⓘ Cross-Reference Search
SLF10N65SV datasheet
slf10n65sv.pdf
SLF10N65SV 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 10A*, 650V, RDS(on),typ =0.81 planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 27nC) has been especially tailored to minimize conduction loss, pro- Fast switching vide superior switching performance, and withstand high en-... See More ⇒
slp10n65s slf10n65s.pdf
LEAD FREE Pb RoHS SLP10N65S/ SLF10N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ=0.8 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switchi... See More ⇒
slp10n65c slf10n65c.pdf
SLP10N65C / SLF10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ. = 0.678 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 38nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi... See More ⇒
slp10n65a slf10n65a.pdf
LEAD FREE Pb RoHS SLP10N65A/SLF10N65A 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on)Typ = 0.745 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 19nC) This advanced technology has been especially tailored - Low Crss ( typical 5.3pF) to minimize on-state resistance, provide superi... See More ⇒
Detailed specifications: SLD65R600E7C, SLD80N02TB, SLD8N50UD, SLD8N65SV, SLD90N02TB, SLD90N03TB, SLD95R3K2GTZ, SLE65R1K2E7, P55NF06, SLF12N65SV, SLF16N65S, SLF95R760GTZ, SLH10RN20T, SLH60R043E7D, SLH60R075GTDI, SLH65R180E7C, SLH95R130GTZ
Keywords - SLF10N65SV MOSFET specs
SLF10N65SV cross reference
SLF10N65SV equivalent finder
SLF10N65SV pdf lookup
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SLF10N65SV replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: ELM34608AA
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