STD25P03L Todos los transistores

NTD25P03L, STD25P03L Power MOSFET -25 A, -30 V, Logic Level P-Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a discrete http //onsemi.com fast recovery diode. V(BR)DSS RDS(on) Typ ID Max Features -30 V 51 mW @ 5.0 V -25 A S Prefix

STD25N10F7, STF25N10F7, STP25N10F7 N-channel 100 V, 0.027 typ., 25 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB RDS(on) Order codes VDSS ID PTOT max.(1) DPAK STD25N10F7 100 V 0.035 25 A 40 W STF25N10F7 100 V 0.035 19 A 25 W TAB STP25N10F7 100 V 0.035 25 A 50 W 1. @ VGS = 10 V 3 3

STD25NF10L N-channel 100V - 0.030 - 25A - DPAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD25NF10L 100V

STD25NF10LA N-channel 100 V, 0.030 , 25 A DPAK STripFET II Power MOSFET Features Order code VDSS RDS(on) max ID STD25NF10LA 100 V

STD25NF10L N-channel 100V - 0.030 - 25A - DPAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD25NF10L 100V

STD25NF10 N-channel 100V - 0.033 - 25A - DPAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD25NF10 100V

STD25NF10 N-channel 100V - 0.033 - 25A - DPAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD25NF10 100V

STx25NM50N N-channel 500 V, 0.11 , 22 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max 3 2 3 1 2 1 STB25NM50N 550 V

STD25NF20 Automotive-grade N-channel 200 V, 0.10 typ., 18 A STripFET Power MOSFET in a DPAK package Datasheet - production data Features RDS(on) Order code VDS max ID PTOT STD25NF20 200 V 0.125 18 A 110 W TAB Designed for automotive applications and 3 1 AEC-Q101 qualified DPAK Extremely low gate charge Exceptional dv/dt capability Low gate input resis

isc N-Channel MOSFET Transistor STD25NF10LA FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 35m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol