PJM2302NSA-S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PJM2302NSA-S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.2 nS
Cossⓘ - Capacitancia de salida: 48 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOT23
- Selección de transistores por parámetros
PJM2302NSA-S Datasheet (PDF)
pjm2302nsa-s.pdf

PJM2302NSA-SN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: 22S Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unle
pjm2302nsa.pdf

PJM2302NSAN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: M22 Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unless
pjm2301psa-s.pdf

PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Features SOT-23 VDS= -20V I = -2AD R =120m (typ) @ V =-2.5VDS(ON) GSR =88m (typ) @ V =-4.5VDS(ON) GS High power and current handing capability Halogen and Antimony Free Surface mount package1. Gate 2.Source 3.DrainMarking : S01Drain 3 Applications Battery protection Load s
pjm2305psa.pdf

PJM2305PSAP-Channel Power MOSFETSOT-23Features Fast switching Low gate charge and RDS(ON) Low reverse transfer capacitances1. Gate 2.Source 3.Drain Marking: S5Application Schematic Diagram Load switch and in PWM applicatopnsDrain3 Power management1GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Paramete
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: UF830G-TM3-T | ET6309 | SM1A35PSU | AP2312GN | IRF8852 | SI2318A | BF1118WR
History: UF830G-TM3-T | ET6309 | SM1A35PSU | AP2312GN | IRF8852 | SI2318A | BF1118WR



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