PJM3401PSA Todos los transistores

 ..1. Size:2604K  pjsemi
 pjm3401psa.pdf

PJM3401PSA P-Enhancement Field Effect Transistor Features SOT-23 High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation 1. Gate 2.Source 3.Drain Marking R1 Applications Schematic Diagram Power switching application Drain 3 Hard switched and high frequency circuits Unint

 5.1. Size:3580K  pjsemi
 pjm3401psc.pdf

PJM3401PSC P-Channel Power MOSFET SOT-23-3 Features VDS= -30V I = -4.5A D RDS(ON)= 60m (max) @-10V 2 Halogen and Antimony Free 3 1 Applications 1. Gate 2.Source 3.Drain Load Switch and in PWM Applications Marking P1 Schematic Diagram Drain 3 1 Gate Source 2 Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified. Parameter Symbol Valu

 8.1. Size:2260K  pjsemi
 pjm3400nsa.pdf

PJM3400NSA N- Enhancement Mode Field Effect Transistor SOT-23 Features VDS = 30V,ID = 5.8A RDS(ON)

 8.2. Size:1464K  pjsemi
 pjm3407psa.pdf

PJM3407PSA P Enhancement Field Effect Transistor SOT-23 Features VDS=-30V, ID=-4.1A RDS(on)=50m (Typ.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge 1. Gate 2.Source 3.Drain Marking R7 Applications Schematic Diagram Load Switch and in PWM Applications Drain 3 1 Gate Source 2 Absolute Maximum Ratings Ratings at TA =25 unless ot

 8.3. Size:3436K  pjsemi
 pjm3400nsc.pdf

PJM3400NSC N- Enhancement Mode Field Effect Transistor SOT-23-3 Features VDS = 30V,ID = 5.8A RDS(ON)