RJU002N06 Todos los transistores

 

RJU002N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJU002N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: UMT3
 

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RJU002N06 Datasheet (PDF)

 ..1. Size:145K  rohm
 rju002n06.pdf pdf_icon

RJU002N06

2.5V Drive Nch MOSFET RJU002N06 Structure Dimensions (Unit : mm) Silicon N-channel MOS FET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : MLSwitching (3) Drain Packaging specifications Inner circuit (3

 0.1. Size:41K  rohm
 rju002n06t106.pdf pdf_icon

RJU002N06

RJU002N06 Transistors 2.5V Drive Nch MOS FET RJU002N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : ML(3) Drain Packa

 0.2. Size:1020K  rohm
 rju002n06fra.pdf pdf_icon

RJU002N06

AEC-Q101 Qualified2.5V Drive Nch MOSFET RJU002N06 RJU002N06FRA Structure Dimensions (Unit : mm)Silicon N-channel MOS FET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : MLSwitching (3) Drain Packaging s

 9.1. Size:216K  rohm
 rju003n03t106.pdf pdf_icon

RJU002N06

2.5V Drive Nch MOSFET RJU003N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : LPSwitching (3) Drain Packaging specifications and hFE Inner circu

MOSTRAR MÁS

Otros transistores... PJM3401PSC , PJM3407PSA , PJM3415PSA , PJM84PSA , EM6M2 , LSK3019FP8 , LSK3541FS8 , RD3P200SNFRA , RFP50N06 , RK7002BMHZG , RQ3C150BC , RQ5E040TN , RQ5E050AT , RRR040P03FRA , RSQ035P03 , RSR025P03 , RTE002P02 .

History: IPI90R340C3 | NCEP10N12AK | NCE3N170 | MTC8958Q8

 

 
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