RJU002N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJU002N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 7 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
Encapsulados: UMT3
Búsqueda de reemplazo de RJU002N06 MOSFET
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RJU002N06 datasheet
rju002n06.pdf
2.5V Drive Nch MOSFET RJU002N06 Structure Dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol ML Switching (3) Drain Packaging specifications Inner circuit (3
rju002n06t106.pdf
RJU002N06 Transistors 2.5V Drive Nch MOS FET RJU002N06 Structure External dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol ML (3) Drain Packa
rju002n06fra.pdf
AEC-Q101 Qualified 2.5V Drive Nch MOSFET RJU002N06 RJU002N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol ML Switching (3) Drain Packaging s
rju003n03t106.pdf
2.5V Drive Nch MOSFET RJU003N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol LP Switching (3) Drain Packaging specifications and hFE Inner circu
Otros transistores... PJM3401PSC , PJM3407PSA , PJM3415PSA , PJM84PSA , EM6M2 , LSK3019FP8 , LSK3541FS8 , RD3P200SNFRA , AON7410 , RK7002BMHZG , RQ3C150BC , RQ5E040TN , RQ5E050AT , RRR040P03FRA , RSQ035P03 , RSR025P03 , RTE002P02 .
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