RJU002N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: RJU002N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: UMT3
RJU002N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJU002N06 Datasheet (PDF)
rju002n06.pdf
2.5V Drive Nch MOSFET RJU002N06 Structure Dimensions (Unit : mm) Silicon N-channel MOS FET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : MLSwitching (3) Drain Packaging specifications Inner circuit (3
rju002n06t106.pdf
RJU002N06 Transistors 2.5V Drive Nch MOS FET RJU002N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : ML(3) Drain Packa
rju002n06fra.pdf
AEC-Q101 Qualified2.5V Drive Nch MOSFET RJU002N06 RJU002N06FRA Structure Dimensions (Unit : mm)Silicon N-channel MOS FET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : MLSwitching (3) Drain Packaging s
rju003n03t106.pdf
2.5V Drive Nch MOSFET RJU003N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : LPSwitching (3) Drain Packaging specifications and hFE Inner circu
rju003n03fra.pdf
AEC-Q101 Qualified2.5V Drive Nch MOSFET RJU003N03 RJU003N03FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : LPSwitching (3) Drain Packaging sp
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
