RSR025P03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RSR025P03
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.098 Ohm
   Paquete / Cubierta: TSMT3

Búsqueda de reemplazo de MOSFET RSR025P03

RSR025P03 Datasheet (PDF)

..1. Size:106K rohm
rsr025p03.pdf

RSR025P03 Transistors 4V Drive Pch MOSFET RSR025P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( )1 20.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : WY Applications(3)

0.1. Size:105K rohm
rsr025p03tl.pdf

0.2. Size:979K rohm
rsr025p03fra.pdf

RSR025P03FRARSR025P03TransistorsAEC-Q101 Qualified4V Drive Pch MOSFETRSR025P03RSR025P03FRA Structure Dimensions (Unit : mm)Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7(3) Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) (1) (2)0.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbrevia

8.1. Size:65K rohm
rsr025n03.pdf

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol

8.2. Size:63K rohm
rsr025n03tl.pdf

8.3. Size:1170K rohm
rsr025n05.pdf

Data Sheet4V Drive Nch MOSFET RSR025N05Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT3Features(3)1) Low on-resistance.2) Fast switching speed.(1) (2)3) Drive circuits can be simple.4) Parallel use is easy.ApplicationSwitchingPackaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering unit (pieces) 300

8.4. Size:926K rohm
rsr025n03fra.pdf

RSR025N03FRARSR025N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RSR025N03FRARSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET2.90.850.4 0.7( )3 Features 1) Low on-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same d

8.5. Size:979K rohm
rsr025n05fra.pdf

RSR025N05FRA Nch 45V 2.5A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS TSMT3 45V(3) RDS(on) (Max.)100mW(1) ID2.5APD1.0W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 BODY DIODE *2 ESD PROTECTI

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: