RSR025P03 Todos los transistores

 

RSR025P03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSR025P03

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.098 Ohm

Encapsulados: TSMT3

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RSR025P03 datasheet

 ..1. Size:106K  rohm
rsr025p03.pdf pdf_icon

RSR025P03

RSR025P03 Transistors 4V Drive Pch MOSFET RSR025P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( ) 1 2 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol WY Applications (3)

 0.1. Size:105K  rohm
rsr025p03tl.pdf pdf_icon

RSR025P03

RSR025P03 Transistors 4V Drive Pch MOSFET RSR025P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( ) 1 2 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol WY Applications (3)

 0.2. Size:979K  rohm
rsr025p03fra.pdf pdf_icon

RSR025P03

RSR025P03FRA RSR025P03 Transistors AEC-Q101 Qualified 4V Drive Pch MOSFET RSR025P03 RSR025P03FRA Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) (1) (2) 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrevia

 8.1. Size:65K  rohm
rsr025n03.pdf pdf_icon

RSR025P03

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. ( ) ( ) 1 2 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol

Otros transistores... RD3P200SNFRA , RJU002N06 , RK7002BMHZG , RQ3C150BC , RQ5E040TN , RQ5E050AT , RRR040P03FRA , RSQ035P03 , CS150N03A8 , RTE002P02 , RTM002P02 , RTQ020N05HZG , RTQ025P02 , RTU002P02 , RUC002N05HZGT116 , RV2C014BC , SCT2080KE .

 

 

 


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