RSR025P03 - описание и поиск аналогов

RSR025P03 Transistors 4V Drive Pch MOSFET RSR025P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( ) 1 2 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol WY Applications (3)

RSR025P03 Transistors 4V Drive Pch MOSFET RSR025P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( ) 1 2 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol WY Applications (3)

RSR025P03FRA RSR025P03 Transistors AEC-Q101 Qualified 4V Drive Pch MOSFET RSR025P03 RSR025P03FRA Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) (1) (2) 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrevia

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. ( ) ( ) 1 2 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. ( ) ( ) 1 2 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol

Data Sheet 4V Drive Nch MOSFET RSR025N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 Features (3) 1) Low on-resistance. 2) Fast switching speed. (1) (2) 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TL Basic ordering unit (pieces) 300

RSR025N03FRA RSR025N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RSR025N03FRA RSR025N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low on-resistance. (1) (2) 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same d

RSR025N05FRA Nch 45V 2.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS TSMT3 45V (3) RDS(on) (Max.) 100mW (1) ID 2.5A PD 1.0W (2) lFeatures lInner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant *1 BODY DIODE *2 ESD PROTECTI