RSR025P03 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RSR025P03
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 105 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.098 Ohm
Тип корпуса: TSMT3
RSR025P03 Datasheet (PDF)
rsr025p03.pdf
RSR025P03 Transistors 4V Drive Pch MOSFET RSR025P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( )1 20.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : WY Applications(3)
rsr025p03tl.pdf
RSR025P03 Transistors 4V Drive Pch MOSFET RSR025P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( )1 20.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : WY Applications(3)
rsr025p03fra.pdf
RSR025P03FRARSR025P03TransistorsAEC-Q101 Qualified4V Drive Pch MOSFETRSR025P03RSR025P03FRA Structure Dimensions (Unit : mm)Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7(3) Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) (1) (2)0.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbrevia
rsr025n03.pdf
RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol
rsr025n03tl.pdf
RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol
rsr025n05.pdf
Data Sheet4V Drive Nch MOSFET RSR025N05Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT3Features(3)1) Low on-resistance.2) Fast switching speed.(1) (2)3) Drive circuits can be simple.4) Parallel use is easy.ApplicationSwitchingPackaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering unit (pieces) 300
rsr025n03fra.pdf
RSR025N03FRARSR025N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RSR025N03FRARSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET2.90.850.4 0.7( )3 Features 1) Low on-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same d
rsr025n05fra.pdf
RSR025N05FRA Nch 45V 2.5A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS TSMT3 45V(3) RDS(on) (Max.)100mW(1) ID2.5APD1.0W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 BODY DIODE *2 ESD PROTECTI
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918