PTP08N65 Todos los transistores

 

PTP08N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PTP08N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
   Paquete / Cubierta: TO-220

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PTP08N65 Datasheet (PDF)

 ..1. Size:569K  pipsemi
ptp08n65 pta08n65.pdf

PTP08N65
PTP08N65

PTP08N65PTA08N65N-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Typ.) ID Adaptor Charger650 V 0.85 8 A SMPS Power Supply LCD Panel PowerDFeatures: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width CurveGGGOrdering InformationDSDS TO-220FTO-220 SPART NUMBER PACKAGE

 8.1. Size:472K  pipsemi
ptp08n06nb.pdf

PTP08N65
PTP08N65

PTP08N06NB 60V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 60V 6.1m 105A RDS(ON),typ.=6.1 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G UPS Inverter D S TO-220 Ordering Information Part Number Packag

 8.2. Size:538K  pipsemi
ptp08n06n.pdf

PTP08N65
PTP08N65

PTP08N06N PbLead Free Package and FinishApplications:a Power SupplyVDSS RDS(ON)(MAX) ID DC-DC Converters110A60V 8m Features: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized BVDSS CapabilityG DS TO-220 Ordering InformationPackage BrandPart Number Package

 8.3. Size:1447K  pipsemi
ptp08n08na.pdf

PTP08N65
PTP08N65

PTP08N08NA Pb Lead Free Package 85V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 85V 6.9m 105A RDS(ON),typ.=6.9 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G UPS Inverter D S TO-220 Ordering Informa

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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