RU20P7C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RU20P7C
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOT-23

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RU20P7C Datasheet (PDF)

..1. Size:415K ruichips
ru20p7c.pdf

RU20P7CP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-5A, RDS (ON) =20m(Typ.)@VGS=-4.5VD RDS (ON) =30m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSSOT23-3DDDDDDDApplicationspp Load Switch

0.1. Size:393K ruichips
ru20p7c-i.pdf

RU20P7C-IP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-5A, RDS (ON) =20m(Typ.)@VGS=-4.5VD RDS (ON) =30m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSSOT23-3Applications Load Switch Power Management Battery ProtectionP-Cha

9.1. Size:338K ruichips
ru20p18l.pdf

RU20P18LP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-18A, RDS (ON) =30m(Typ.)@VGS=-4.5V D RDS (ON) =45m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS Compliant)STO252DAp

9.2. Size:327K ruichips
ru20p5e.pdf

RU20P5EP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-5A, RDS (ON) =50m(Typ.)@VGS=-4.5V RDS (ON) =65m(Typ.)@VGS=-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)SDGSOT89DApplications Load Switch Power ManagementGSP-Channel MOSFETAbsolute M

9.3. Size:361K ruichips
ru20p4c6.pdf

RU20P4C6P-Channel Advanced Power MOSFETFeatures Pin Description -20V/-4A,S RDS (ON) =35m(Typ.)@VGS=-4.5V RDS (ON) =45m(Typ.)@VGS=-2.5VD Low On-ResistanceD Super High Dense Cell Design Reliable and Rugged Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)DDSOT23-6DDDDDDDApplicationspp Load S

9.4. Size:270K ruichips
ru20p4c.pdf

RU20P4CP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -20V/-4A,RDS (ON) =40m (Typ.) @ VGS=-4.5VRDS (ON) =55m (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and RuggedSOT-23-3 Lead Free and Green AvailableApplications Power Management Load SwitchP-Channel MOSFETAbsolute Maximum RatingsSymbolParam

9.5. Size:267K ruichips
ru20p3b.pdf

RU20P3BP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -20V/-3A,RDS (ON) =80m (Typ.) @ VGS=-4.5VRDS (ON) =110m (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and RuggedSOT-23 Lead Free and Green AvailableApplications Power Management Load SwitchP-Channel MOSFETAbsolute Maximum RatingsSymbolParame

9.6. Size:420K ruichips
ru20p3c.pdf

RU20P3CP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-3A,RDS (ON) =110m(Typ.)@VGS=-4.5VDRDS (ON) =150m(Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Ultra Low On-ResistanceE ti l d /dt bilit Exceptional dv/dt capability Low Gate Charge Minimize Switching LossG Lead Free and Green Devices (RoHS Compliant)SSO

9.7. Size:339K ruichips
ru20p2b.pdf

RU20P2BP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-2.4A, RDS (ON) =95m(Typ.)@VGS=-4.5VD RDS (ON) =140m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Load SwitchGSP-Channel MOSFETAbsolute Maximum RatingsS

9.8. Size:867K cn vbsemi
ru20p4c.pdf

RU20P4Cwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

9.9. Size:866K cn vbsemi
ru20p3b.pdf

RU20P3Bwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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