RU30D20M2 Todos los transistores

 

RU30D20M2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU30D20M2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 16 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: PDFN3333

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RU30D20M2 datasheet

 ..1. Size:386K  ruichips
 ru30d20m2.pdf pdf_icon

RU30D20M2

RU30D20M2 N-Channel Advanced Power MOSFET Features Pin Description 30V/20A, RDS (ON) =8.5m (Typ.)@VGS=10V D2D2 D1D1 RDS (ON) =11.5m (Typ.)@VGS=4.5V Super High Dense Cell Design Fast Switching Speed Low gate Charge G2 100% avalanche tested S1G1S2 Lead Free and Green Devices Available (RoHS Compliant) PIN1 PIN1 PDFN3333 D1 D2 Applications Switchi

 6.1. Size:263K  ruichips
 ru30d20m3.pdf pdf_icon

RU30D20M2

RU30D20M3 Dual N-Channel Advanced Power MOSFET Features Pin Description 30V/20A, RDS (ON) =8.5m (Typ.)@VGS=10V S2G2 RDS (ON) =11.5m (Typ.)@VGS=4.5V S1G1 Uses Ruichips advanced TrenchTM technology Excellent QgxRDS(on) product(FOM) Reliable and Rugged D2 100% avalanche tested D2 D1 Lead Free and Green Devices Available (RoHS Compliant) D1 PIN1 DFN303

 9.1. Size:267K  ruichips
 ru30d10h.pdf pdf_icon

RU30D20M2

RU30D10H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/10A, RDS (ON) =16m (Typ.) @ VGS=10V RDS (ON) =24m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles

 9.2. Size:266K  ruichips
 ru30d8h.pdf pdf_icon

RU30D20M2

RU30D8H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/7A, RDS (ON) =18m (Typ.) @ VGS=10V RDS (ON) =45m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless

MOSTRAR MÁS

Otros transistores... RU20C10H , RU20P4C6 , RU20P7C , RU30120R , RU3060L , RU3080L , RU3089M , RU3091M , IRF630 , RU30D20M3 , RU30J30M , RU30L70L , RU30S15H , RU40190R , RU40191S , RU40C40L4 , RU6070L-A .

 

 

 

 

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