RU7088R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RU7088R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 70 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 75 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET RU7088R

RU7088R Datasheet (PDF)

..1. Size:295K ruichips
ru7088r.pdf

RU7088RN-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A, RDS (ON) =6.5m(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)TO220Applications Switching Application Syste

..2. Size:757K cn vbsemi
ru7088r.pdf

RU7088Rwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit Uni

0.1. Size:450K ruichips
ru7088r3.pdf

RU7088R3N-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A,Insulation Slug RDS (ON) =6.5m(Typ.)@VGS=10V Insulation Slug(VISO1500VAC) Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested 175C Operating TemperatureS Lead Free and Gre

8.1. Size:306K ruichips
ru7088a.pdf

RU7088AN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 65V/88A,RDS (ON) =6m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications The device is suitable for use inPWM ,load switching and generalpurpose applications.N-Channel

9.1. Size:328K ruichips
ru7080l.pdf

RU7080LN-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A,D RDS (ON) =5.7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications Power SupplyGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating UnitC

9.2. Size:1227K ruichips
ru7080s.pdf

RU7080SN-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A,D RDS (ON) =7m(Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications Motor Drives Uninterruptible Power SuppliesG DC/DC converter

9.3. Size:300K ruichips
ru7085r.pdf

RU7085RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/85A,RDS (ON) =6m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Rati

9.4. Size:634K ruichips
ru7080r.pdf

RU7080RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/80A,RDS (ON) =7m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching Application SystemsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitC

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Liste

Recientemente añadidas las descripciónes de los transistores: