RUH40130M Todos los transistores

 

RUH40130M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RUH40130M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 3350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm

Encapsulados: PDFN5060

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RUH40130M datasheet

 ..1. Size:383K  ruichips
ruh40130m.pdf pdf_icon

RUH40130M

RUH40130M N-Channel Advanced Power MOSFET Features Pin Description 40V/130A, RDS (ON) =1.9m (Typ.)@VGS=10V D D D D RDS (ON) =2.7m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters On board power

 8.1. Size:384K  ruichips
ruh40140m.pdf pdf_icon

RUH40130M

RUH40140M N-Channel Advanced Power MOSFET Features Pin Description 40V/140A, RDS (ON) =1.4m (Typ.)@VGS=10V D D D D RDS (ON) =1.9m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters On board power

 8.2. Size:287K  ruichips
ruh40190m.pdf pdf_icon

RUH40130M

RUH40190M N-Channel Advanced Power MOSFET Features Pin Description 40V/190A, DD RDS (ON) =1.7m (Typ.)@VGS=10V D D Uses Ruichips Proprietary New Trench Technology Ultra Low On-Resistance Exceptional dv/dt Capability G S Low Gate Charge Minimize Switching Loss S S 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) PIN1 DFN5060 D A

 9.1. Size:319K  ruichips
ruh4022m3.pdf pdf_icon

RUH40130M

RUH4022M3 N-Channel Advanced Power MOSFET Features Pin Description 40V/20A, D RDS (ON) =16m (Typ.)@VGS=10V D D RDS (ON) =23m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S S Excellent QgxRDS(on) product(FOM) 100% Avalanche Tested PIN1 Lead Free and Green Devices

Otros transistores... RU75N08L , RU75N08S , RU8205BC6 , RU8590S , RUH1H150R , RUH30120M-C , RUH30150M , RUH3051M2 , CS150N03A8 , RUH40140M , RUH4040M2 , RUH60100M , SIF4N65F , SIF5N65F , LPN1010C , LPN2010C , 2N7002KS6 .

History: AGM60P90D | 1D5N60 | DMJ70H1D0SV3

 

 

 

 

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