RUH60100M Todos los transistores

 ..1. Size:384K  ruichips
 ruh60100m.pdf

RUH60100M N-Channel Advanced Power MOSFET Features Pin Description 60V/100A, RDS (ON) =2.6m (Typ.)@VGS=10V D D D D RDS (ON) =3.6m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications LED backlighting On board power

 8.1. Size:283K  ruichips
 ruh60120m.pdf

RUH60120M N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =4m (Typ.)@VGS=10V G RDS (ON) =4.5m (Typ.)@VGS=4.5V S S S Uses Ruichips Advanced RUISGTTM Technology D Low Gate Charge Minimizing Switching Loss Ultra Low On-Resistance DD Excellent QgxRDS(on) product(FOM) DD 100% Avalanche Tested PIN1 Lead Free and Green Devic

 8.2. Size:321K  ruichips
 ruh60120l.pdf

RUH60120L N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, D RDS (ON) =3.2m (Typ.)@VGS=10V RDS (ON) =3.6m (Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 175 C Operating Temperature G Lead Free and Green Devices (RoHS Compliant) S TO252 D Appli

 9.1. Size:225K  ruichips
 ruh6080m3-c.pdf

RUH6080M3-C N-Channel Advanced Power MOSFET Features Pin Description 60V/80A, RDS (ON) =5.3m (Typ.)@VGS=10V D D D RDS (ON) =6.5m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S Excellent QgxRDS(on) product(FOM) S 100% Avalanche Tested PIN1 Lead Free and Green De

 9.2. Size:372K  ruichips
 ruh6080r.pdf

 9.3. Size:240K  ruichips
 ruh60d60m.pdf

RUH60D60M Dual N-Channel Advanced Power MOSFET Features Pin Description 60V/60A, D2 RDS (ON) =7.2m (Typ.)@VGS=10V D2 D1 RDS (ON) =8.2m (Typ.)@VGS=4.5V D1 Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G2 Ultra Low On-Resistance S2 G1 Excellent QgxRDS(on) product(FOM) S1 100% Avalanche Tested PIN1 Lead Free