RUH60100M PDF and Equivalents Search

 

RUH60100M Specs and Replacement

Type Designator: RUH60100M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 126 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 1450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: PDFN5060

RUH60100M substitution

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RUH60100M datasheet

 ..1. Size:384K  ruichips
 ruh60100m.pdf pdf_icon

RUH60100M

RUH60100M N-Channel Advanced Power MOSFET Features Pin Description 60V/100A, RDS (ON) =2.6m (Typ.)@VGS=10V D D D D RDS (ON) =3.6m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications LED backlighting On board power ... See More ⇒

 8.1. Size:283K  ruichips
 ruh60120m.pdf pdf_icon

RUH60100M

RUH60120M N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =4m (Typ.)@VGS=10V G RDS (ON) =4.5m (Typ.)@VGS=4.5V S S S Uses Ruichips Advanced RUISGTTM Technology D Low Gate Charge Minimizing Switching Loss Ultra Low On-Resistance DD Excellent QgxRDS(on) product(FOM) DD 100% Avalanche Tested PIN1 Lead Free and Green Devic... See More ⇒

 8.2. Size:321K  ruichips
 ruh60120l.pdf pdf_icon

RUH60100M

RUH60120L N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, D RDS (ON) =3.2m (Typ.)@VGS=10V RDS (ON) =3.6m (Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 175 C Operating Temperature G Lead Free and Green Devices (RoHS Compliant) S TO252 D Appli... See More ⇒

 9.1. Size:225K  ruichips
 ruh6080m3-c.pdf pdf_icon

RUH60100M

RUH6080M3-C N-Channel Advanced Power MOSFET Features Pin Description 60V/80A, RDS (ON) =5.3m (Typ.)@VGS=10V D D D RDS (ON) =6.5m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S Excellent QgxRDS(on) product(FOM) S 100% Avalanche Tested PIN1 Lead Free and Green De... See More ⇒

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Detailed specifications: RU8590S, RUH1H150R, RUH30120M-C, RUH30150M, RUH3051M2, RUH40130M, RUH40140M, RUH4040M2, STP80NF70, SIF4N65F, SIF5N65F, LPN1010C, LPN2010C, 2N7002KS6, SR3400, SR3401, SRX3134K

Keywords - RUH60100M MOSFET specs

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