.8205P Todos los transistores

 ..1. Size:287K  cn shenzhen fuman elec
 .8205s .8205p.pdf

 9.1. Size:115K  1
 ngd8205n.pdf

NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required

 9.2. Size:233K  toshiba
 tpcp8205-h.pdf

TPCP8205-H MOSFETs Silicon N-Channel MOS (U-MOS ) TPCP8205-H TPCP8205-H TPCP8205-H TPCP8205-H 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Low drain-source on-resistance RDS(ON) = 20 m

 9.3. Size:289K  toshiba
 tpcs8205.pdf

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance R = 30 m (typ.) DS (ON) High forward transfer admittance Y = 10 S (typ.) fs Low leakage current IDSS = 10

 9.4. Size:530K  central
 cmlm8205.pdf

CMLM8205 Multi Discrete Module www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION P-CHANNEL MOSFET AND The CENTRAL SEMICONDUCTOR CMLM8205 is a LOW VF SCHOTTKY DIODE Multi Discrete Module consisting of a single P-Channel enhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signal ge

 9.5. Size:115K  onsemi
 ngd8205a.pdf

NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required

 9.6. Size:420K  utc
 ut8205al-al6-r ut8205ag-ag6-r ut8205al-s08-r ut8205ag-s08-r ut8205al-p08-r ut8205ag-p08-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @ VGS=4.5V, ID=6.0A * Fast switching capability * Avalanch

 9.7. Size:217K  utc
 ut8205a.pdf

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @VGS = 4.5 V * Ultra low gate charge ( typical 23 nC ) * Low re

 9.8. Size:2661K  jiangsu
 cjl8205a.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8205A Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-6L 30 m @4.5V 5A 20V @2.5V 45m FEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Current Handing Ca

 9.9. Size:2427K  htsemi
 pt8205.pdf

PT8205 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@3.4A 46m RDS(ON), Vgs@4.V, Ids@4.3A 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SOT-163 Millimeter Millimeter REF. REF.

 9.10. Size:2146K  htsemi
 pt8205a.pdf

PT8205A 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38m RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications 1 8 D1 D2 2 7 S1 S2 3 6 S1 S2 4 5 G1 G2 TSSOP-8 Mi

 9.11. Size:434K  cet
 ceg8205a.pdf

CEG8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 25m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. D 1 8 D Lead free product is acquired. 2 7 S2 S1 TSSOP-8 for Surface Mount Package. S1 3 6 S2 4 G1 5 G2 G2 S2 S2 G1 D S1 S1 D TSSOP

 9.12. Size:658K  cet
 ceh8205.pdf

CEH8205 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS(ON) TYP = 25 m @VGS = 4.5V. RDS(ON) TYP = 30m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. D2(5) D1(2) TSOP-6 package. Halogen free. 4 5 6 G1(6) G2(4) 3 2 1 S1(1) S2(3) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

 9.13. Size:305K  gsme
 gm8205.pdf

 9.14. Size:415K  gsme
 gm8205d.pdf

 9.15. Size:344K  gsme
 gm8205a.pdf

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8205A Dual N-channel 20V, TSSOP-8 MOSFET N- Dual N-channel 20V, TSSOP-8 MOSFET N- Dual N-channel 20V, TSSOP-8 MOSFET N- Dual N-channel 20V, TSSOP-8 MOSFET N-

 9.16. Size:47K  hsmc
 h8205.pdf

Spec. No. MOS200904 HI-SINCERITY Issued Date 2009.02.27 Revised Date 2010.07.02 MICROELECTRONICS CORP. Page No. 1/4 H8205 Symbol & Pin Assignment H8205 Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Pin 1 Source 1 4 3 Pin 2 Drania 1 & 2 Q2 Pin 3 Source 2 5 2 Pin 4 Gate 2 Description Pin 5 Drania 1 & 2 6 1 Pin 6 Gate 1 Q1 This N-Channel 2.5V s

 9.17. Size:51K  hsmc
 h8205a.pdf

Spec. No. MOS200905 HI-SINCERITY Issued Date 2009.02.27 Revised Date 2010.06.30 MICROELECTRONICS CORP. Page No. 1/4 H8205A 8-Lead Plastic TSSOP-8L Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Package Code TS H8205A Symbol & Pin Assignment Description 8 7 6 5 Pin 1 Drain Pin 2 / 3 Source 1 Q2 This N-Channel 2.5V specified MOSFET is a rugged gate version

 9.18. Size:566K  alfa-mos
 afn8205.pdf

AFN8205 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8205, N-Channel enhancement mode 20V/5A,RDS(ON)=29m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=37m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=50m @VGS=1.8V These devices are particularly suited for low Super

 9.19. Size:381K  shenzhen
 s8205a.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET N MOSFET Dual N-Channel Enhancement Mode Field Effect Transistor S8205A TSSOP-8 Unit mm Features 5A,20V.rDS(on) = 0.025 @VGS =4.5 V rDS(on) = 0.040 @VGS =2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Continuous Drain Current ID A 5

 9.20. Size:106K  samhop
 sts8205.pdf

Gre r r P Pr Pr Pro STS8205 a S mHop Microelectronics C orp. Ver 4.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 27.5 @ VGS=4.5V Suface Mount Package. 28.5 @ VGS=4.0V ESD Protected. 20V 5A 30.0 @ VGS=3.7V 33.0 @ VGS=3.1V 38.0 @ VGS=2.5V D1 D2

 9.21. Size:192K  samhop
 stg8205.pdf

Green Product STG8205 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 26 @ VGS=4.5V Suface Mount Package. 20V 6A 35 @ VGS=2.5V D1 D2 TS S OP 1 8 D1/D2 D1/D2 2 7 S 1 S 2 G 1 G 2 3 6 S 1 S 2 4 5 G 2 G 1

 9.22. Size:599K  silikron
 ssf8205u.pdf

SSF8205U Main Product Characteristics D1 D2 VDSS 18V G1 G2 S1 S2 RDS(on) 20mohm(typ.) ID 4.5A Marking and pin SOT23-6 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switc

 9.23. Size:450K  silikron
 ssf8205a.pdf

SSF8205A DESCRIPTION D1 D2 The SSF8205A uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON) with gate voltages as low as 0.65V. This device is G1 G2 suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram GENERAL FEATURES V = 20V,I = 6A DS D R

 9.24. Size:612K  silikron
 ssf8205uh2.pdf

SSF8205UH2 Main Product Characteristics D1 D2 VDSS 18V G1 G2 S1 S2 RDS(on) 20mohm(typ.) ID 4.5A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast swit

 9.25. Size:683K  silikron
 ssf8205.pdf

SSF8205 Main Product Characteristics D1 D2 VDSS 20V G1 G2 S1 S2 RDS(on) 20mohm(typ.) ID 4A Marking and pin SOT23-6 Sc he mati c di a gram A s si gnment Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge F

 9.26. Size:292K  can-sheng
 cs8205a 6a sot-23-6.pdf

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com 8205A Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 27.5 @ VG S = 4.0V 20V 6A S urface Mount Package. 37.5@V G S = 2.5V D1 D2 -

 9.27. Size:387K  can-sheng
 cs8205a sot-23-6.pdf

 9.28. Size:278K  can-sheng
 cs8205b.pdf

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-6 Plastic-Encapsulate MOSFETS 8205B MOSFET(N-Channel) FEATURES SOT-23-6 VDS=19.5V,ID=6A RDS(ON)

 9.29. Size:391K  can-sheng
 fs8205a tssop-8.pdf

 9.30. Size:1413K  blue-rocket-elect
 br8205.pdf

BR8205 Rev.D Nov.-2016 DATA SHEET / Descriptions SOT23-6 N MOS N-channel Double MOSFET in a SOT23-6 Plastic Package. / Features R 2.5V DS(on) advanced trench technology to provide excellent RDS(on), low gate charge and operation with

 9.31. Size:235K  sino
 sm8205ao.pdf

SM8205AO Dual N-Channel Enhancement Mode MOSFET Features Pin Description D2 18V/6A, S2 S2 RDS(ON)= 23m (typ.) @ VGS= 4.5V G2 RDS(ON)= 34m (typ.) @ VGS= 2.5V D1 100% UIS Tested S1 S1 G1 Reliable and Rugged Lead Free and Green Devices Available Top View of TSSOP-8 (RoHS Compliant) (1) (8) D1 D2 Applications (4) (5) Power Management in Notebook Computer, G1 G2 Po

 9.32. Size:287K  first silicon
 ftk8205a.pdf

SEMICONDUCTOR FTK8205A TECHNICAL DATA D 1 D 2 DESCRIPTION The FTK8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G 1 G 2 with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S 1 S 2 Schematic diagram GENERAL FEATURES VDS = 20V,ID = 6A D1 D2 RD

 9.33. Size:638K  kexin
 ki8205t.pdf

SMD Type MOSFET SMD Type Dual N-Channel High Density Trench MOSFET KI8205T ( ) SOT-23-6 Unit mm +0.1 0.4 -0.1 Features Super high dense cell trench design for low RDS(on). Rugged and reliable. Surface Mount package. 1 +0.02 0.15 -0.02 +0.01 -0.01 2 +0.2 -0.1 D1 D2 S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G2 S2 3 4 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

 9.34. Size:672K  kexin
 ki8205a.pdf

SMD Type MOSFET SMDType Dual N-Channel Enhancement MOSFET KI8205A TSSOP-8 Unit mm Features 6.45+0.1 -0.1 6.5 A, 20 V. rDS(on) = 0.025 @ VGS = 4.5 V 4.45+0.1 -0.1 rDS(on) = 0.029 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 10 V Continuous Drain Current ID 6.5 A Pulsed Drain Current IDM 20 A

 9.35. Size:1183K  ruichips
 ru8205bc6.pdf

RU8205BC6 N-Channel Advanced Power MOSFET Features Pin Description 20V/6A, G2 RDS (ON) =11m (Typ.)@VGS=4.5V RDS (ON) =16m (Typ.)@VGS=2.5V D1/D2 Low RDS (ON) G1 Super High Dense Cell Design S2 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D1/D2 Dual N-Channel MOSFET S1 SOT23-6 D1 D2 Applications Power Management G1 G2

 9.36. Size:255K  ruichips
 ru8205g.pdf

RU8205G N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/6A, RDS (ON) =21m (Typ.) @ VGS=4.5V RDS (ON) =30m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged TSSOP-8 Lead Free and Green Available Applications Power Management Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T

 9.37. Size:252K  ruichips
 ru8205c6.pdf

RU8205C6 N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/6A, RDS (ON) =22m (Typ.) @ VGS=4.5V RDS (ON) =30m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOT-23-6 Applications Power Management Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings

 9.38. Size:827K  ait semi
 am8205.pdf

AiT Semiconductor Inc. AM8205 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8205 uses advanced trench technology to V = 20V, I = 6A DS D provide excellent R , low gate charge and R

 9.39. Size:629K  belling
 blm8205a.pdf

Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET D1 D2 Description The BLM8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram General Features VDS = 19.

 9.40. Size:870K  belling
 blm8205e-j blm8205e-g.pdf

BLM8205E Power MOSFET 1. Description Advantages The BLM8205E uses advanced trench technology to provide excellent R ,low gate DS(ON) charge and operation with gate voltages as low as 0.7V.This device is suitable for use as a Battery protection or other switching application. Key Characteristics Parameter Value Unit SOT23-6 Schematic diagram V 19.5 V DS I 6 A D R 18 m

 9.41. Size:501K  belling
 blm8205b.pdf

 9.42. Size:332K  belling
 blm8205.pdf

 9.43. Size:436K  globaltech semi
 gsm8205.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8205, N-Channel enhancement mode 20V/5A,RDS(ON)=29m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=37m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=50m @VGS=1.8V These devices are particularly suited for low Super high density cell design for ext

 9.44. Size:1053K  matsuki electric
 me8205e me8205e-g.pdf

ME8205E/ME8205E-G Dual N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME8205E is the Dual N-Channel logic enhancement mode RDS(ON) 22m @VGS=4.5V power field effect transistor, produced using high cell density DMOS RDS(ON) 23m @VGS=4.0V trench technology. This high density process is especially tailored to RDS(ON) 26m @VGS=3.0V minimize on-state r

 9.45. Size:1302K  matsuki electric
 me8205b me8205b-g.pdf

ME8205B/ME8205B-G N-Channel 20V(D-S) MOSFET FEATURES GENERAL DESCRIPTION RDS(ON) 30 m @VGS=4.5V The ME8205B-G is the N-Channel logic enhancement mode power RDS(ON) 35m @VGS=2.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi

 9.46. Size:213K  m-mos
 mmn8205.pdf

MMN8205 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@4.0A = 38m RDS(ON), Vgs@4.0V, Ids@5.0A = 30m RDS(ON), Vgs@4.5V, Ids@5.0A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion batter

 9.47. Size:339K  ncepower
 nce8205b.pdf

Pb Free Product http //www.ncepower.com NCE8205B NCE N-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gen

 9.48. Size:299K  ncepower
 nce8205t.pdf

Pb Free Product http //www.ncepower.com NCE8205t NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The NCE8205t uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a Schematic diagram Battery protection or in other Switching application. Gen

 9.49. Size:403K  ncepower
 nce8205a.pdf

Pb Free Product http //www.ncepower.com NCE8205A NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gener

 9.50. Size:443K  ncepower
 nce8205.pdf

Pb Free Product http //www.ncepower.com NCE8205 NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE8205 uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gener

 9.51. Size:316K  ncepower
 nce8205i.pdf

Pb Free Product http //www.ncepower.com NCE8205i NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205i uses advanced trench technology to provide D1 D2 excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gen

 9.52. Size:5365K  pipsemi
 pip8205.pdf

PIP8205 20V N-Channel MOSFET BVDSS RDS(ON),max.m RDS(ON),typ.m Test Conditions ID General Features 20 16 VGS=10V, ID=5.0A Proprietary New Trench Technology 20V V =4.5V, I =4.5A 7A 22 18 GS D Low Gate Charge Minimize Switching Loss VGS=2.5V, ID=3.0A 28 22 Fast Recovery Body Diode D1/D2 S2 S2 Applications G2 Pin 1 High efficiency

 9.53. Size:444K  prospower
 ps8205b.pdf

PS8205B 20V Dual Channel NMOSEFT Revision 1.0 Update Date Apr. 2011 ProsPower Microelectronics Co., Ltd PS8205B 20V Dual Channel NMOSFET 2. Applications 1. General Description Battery management in nomadic equipment The PS8205B uses advanced trench technology DC motor control and design to provide excellent Rds(on) with low DC-DC converters gate charge. This

 9.54. Size:410K  prospower
 ps8205a.pdf

PS8205A 20V Dual Channel NMOSEFT Revision 1.0 Update Date Apr. 2011 ProsPower Microelectronics Co., Ltd PS8205A 20V Dual Channel NMOSFET 2. Applications 1. General Description Battery management in nomadic equipment The PS8205A uses advanced trench technology DC motor control and design to provide excellent Rds(on) with low DC-DC converters gate charge. This

 9.55. Size:376K  semtron
 smc8205aw.pdf

SMC8205AW 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC8205AW is the Dual N-Channel logic 20V/6.0A, RDS(ON) =21m (typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/5.2A, RDS(ON) =25m (typ.)@VGS =2.5V which is produced using high cell density. advanced trench technology to provide excellent RDS(ON). Super high density ce

 9.56. Size:499K  semtron
 smc8205as.pdf

SMC8205AS 20V Dual N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC8205AS is the Dual N-Channel logic 20V/6.0A, RDS(ON) =20m (typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/5.2A, RDS(ON) =24m (typ.)@VGS =2.5V which is produced using high cell density. advanced trench technology to provide excellent RDS(ON). Super high densi

 9.57. Size:408K  slkor
 sl8205s.pdf

SL8205S Power MOSFET Dual N-Channel APPLIACTION FEATURES Portable Equipment 20V 5A N-channel Trench Mosfet Battery Powered System RDSON 27m @Vgs=4.5V, Id=5A RDSON 36m @Vgs=2.5V, Id=3A Low gate Charge Fast switching capability High reliability and rugged SYMBOL SOT-23-6 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Drain-Source Vo

 9.58. Size:355K  ubiq
 qm8205v.pdf

QM8205V Dual N-Ch Fast Switching MOSFETs General Description Product Summery The QM8205V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 6A for most of the small power switching and load switch applications. The QM8205V meet the RoHS and Green Product requirement with full

 9.59. Size:1664K  agertech
 atm8205dnsg.pdf

ATM8205DNSG Dual N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 20V Continuous Drain Current 5A Descriptions The ATM8205DNSG uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a battery protection or in other switching application. Features VDS=20V,ID=5A Typ.R

 9.60. Size:1551K  agertech
 atm8205dnpd.pdf

ATM8205DNPD Dual N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 20V Continuous Drain Current 5A Descriptions TSSOP8 The ATM8205DNPD uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a battery protection or in other switching application. Features VDS=20V,ID=5

 9.61. Size:2085K  allpower
 ap8205.pdf

 9.62. Size:1327K  allpower
 ap8205a.pdf

 9.63. Size:709K  anbon
 as8205m.pdf

AS8205M N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 23m @4.5V 20V 5A 27m @2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205 S1 D1/D2 S2 Document ID Issued Date Revised

 9.64. Size:401K  fortune semi
 fs8205.pdf

REV. 1.7 FS8205-DS-17_EN NOV 2011 Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET Only FORTUNE' Properties Reference For FS8205 Fortune Semiconductor Corporation 28F.,No.27, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel. 886-2-28094742 Fax 886-2-28094874 www.ic-fortune.com This manual conta

 9.65. Size:302K  fortune semi
 fs8205a.pdf

REV. 1.2 FS8205A-DS-12_EN AUG 2009 Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET Only FSC Properties Reference For FS8205A Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel. 886-2-28094742 Fax 886-2-28094874 www.ic-fortune.com This manual contai

 9.66. Size:4365K  fuxinsemi
 fs8205a.pdf

FS8205A N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 25m @4.5V 20V 6A 32m @2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205A S1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1 FS

 9.67. Size:752K  eternal
 et8205b.pdf

Eternal Semiconductor Inc. ET8205B Dual N-Channel High Density Trench MOSFET (20V, 7A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 16 @ VGS = 4.5V, ID=7A 20V 7A 19 @ VGS = 2.5V, ID=5.5A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free ET8205B Pin Assignmetty & Sy

 9.68. Size:573K  eternal
 et8205a.pdf

Eternal Semiconductor Inc. ET8205A Dual N-Channel High Density Trench MOSFET (20V, 6A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 19 @ VGS = 4.5V, ID=6A 20V 6.0A 20@ VGS = 4.0V, ID=6A 25@ VGS = 2.5V, ID=5.2A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free Pin 1

 9.69. Size:467K  eternal
 et8205.pdf

Eternal Semiconductor Inc. ET8205 Dual N-Channel High Density Trench MOSFET (20V, 6A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 19 @ VGS = 4.5V, ID=6A 20V 6.0A 20 @ VGS = 4.0V, ID=6A 25 @ VGS = 2.5V, ID=5.2A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free ET82

 9.70. Size:451K  guangdong hottech
 s8205a.pdf

S8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES Low on-resistance V =20V,I =5A,R 25m @V =4.5V DS D DS(ON) GS Low gate charge For synchronous rectifier applications Surface Mount device SOT-23-6 MECHANICAL DATA Case SOT-23-6 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Moisture Sensitivity L

 9.71. Size:1798K  huashuo
 hsw8205.pdf

HSW8205 Dual N-ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSW8205 is the low RDSON trenched N-CH MOSFETs. This product is suitable for Lithium-ion RDS(ON),max 28 m battery pack applications. The HSW8205 meet the RoHS and Green Product ID 4.6 A requirement with full function reliability approved. l Green Device Available l Super Low Gate C

 9.72. Size:932K  huashuo
 hso8205.pdf

HSO8205 Dual N-ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSO8205 is the low RDSON trenched N-CH MOSFETs. This product is suitable for Lithium-ion RDS(ON),max 27 m battery pack applications. The HSO8205 meet the RoHS and Green Product ID 6 A requirement with full function reliability approved. Green Device Available TSSOP8 Pin Configur

 9.73. Size:986K  jiejie micro
 jmtm8205a.pdf

JMTM8205A Description JMT Dual N-channel Enhancement Mode Power MosFET Features Applicatio l 19.5V, 5A l Load Switch RDS(ON)

 9.74. Size:975K  jiejie micro
 jmtm8205b.pdf

JMTM8205B Description JMT Dual N-channel Enhancement Mode Power MosFET Features Applicatio 20V, 6A Load Switch RDS(ON)

 9.75. Size:843K  jestek
 jst8205s.pdf

JST8205S 20V,4.8A Dual N-Channel Mosfet FEATURES SOT-23-6L RDS(ON) 21.5m @VGS=4.5V RDS(ON) 27.5m @VGS=2.5V APPLICATIONS Load Switch for Portable Devices Battery Protection Power Management MARKING Dual N-CHANNEL MOSFET Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage V 12 GS I 4.8 D

 9.76. Size:177K  jsmsemi
 8205a 8205s.pdf

8205-A 20V N-Channel Enhancement-Mode MOSFET 2.5V TSSOP-8/SOT-23-6 8205A/TSSOP-8 8205S/SOT-23-6 G1 NC G2 6 5 4 D1/D2 8 D1/D2 S1 D S2 S1 7 S2 S1 6 S2 G1 5 G2 Drain 1 2 3 N-Channel MOSFET Gate1 Gate2 So

 9.77. Size:1172K  lowpower
 lpm8205b6f lpm8205tsf.pdf

Preliminary Datasheet LPM8205 Dual N -Channel Enhancement Power MOSFET General Description Features 100% EAS Guaranteed The LPM8205 integrates two N-Channel Green Device Available EnhancementMOSFET Transistor. It uses advanced trenchtechnology and design to provide Super Low Gate Charge excellentR with lowgate charge. This device is DS(ON) Excellent CdV/dt e

 9.78. Size:629K  natlinear
 np8205mr.pdf

NP8205MR 20V Dual N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP8205MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V ID =6.5A DS Marking and pin assignment

 9.79. Size:2585K  cn szxunrui
 si8205a.pdf

SOT-23-6 Plastic-Encapsulate MOSFETS SI8205A Dual N-Channel MOSFET SI8205A V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.022 @ 4.5V 20V 6.0A 0.030 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLICATION Battery Protection Load Switch

 9.80. Size:3295K  cn szxunrui
 si8205s.pdf

SOT-23-6 Plastic-Encapsulate MOSFETS SI8205S Dual N-Channel MOSFET SI8205S V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.025 @ 4.5V 20V 5.0A 0.033 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLICATION Battery Protection Load Switch

 9.81. Size:361K  cn shenzhen fuman elec
 sc8205.pdf

FM , FM WWW.SZLCSC.COM, SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. 5 6 SC8205 ( 20V N MOS S&CIC0706) 20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@1.8V, Ids@2.0A =

 9.82. Size:328K  cn shenzhen fuman elec
 .8205a.pdf

FM , FM WWW.SZLCSC.COM, SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. .8205A ( S&CIC1850) 20V N MOS 2 3 4 20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@2.5V, Ids@3A = 2

 9.83. Size:328K  cn shenzhen fuman elec
 sc8205s.pdf

FM , FM WWW.SZLCSC.COM, SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. SC8205S ( S&CIC0706) 20V N MOS 20V N-Channel Enhancement-Mode MOSFET 2 3 4 RDS(ON), Vgs@1.8V, Ids@2.0A

 9.84. Size:3645K  cn puolop
 pt8205.pdf

PT8205 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 24m RDS(ON), Vgs @ 4.5V, Ids @ 6A = 20m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SOT-163 (SOT-23-6L) Millimeter Millimet

 9.85. Size:2391K  cn tuofeng
 s8205a.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-6 Plastic-Encapsulate MOSFETS S8205A S8205A Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.022 @ 4.5V 20V 6.0A 0.030 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLI

 9.86. Size:2557K  cn tuofeng
 s8205b.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-6 Plastic-Encapsulate MOSFETS S8205B S8205B Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.017 @ 4.5V 20V 6.0A 0.021 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLI

 9.87. Size:1703K  winsok
 wst8205a.pdf

WST8205A Dual N-Ch MOSFET General Description Product Summery The WST8205A is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 32m 5.3A for most of the small power switching and load switch applications. Applications The WST8205A meet the RoHS and Green High Frequency Point-of-Load

 9.88. Size:1020K  winsok
 wsp8205.pdf

WSP8205 Dual N-Channel MOSFET Product Summery General Description The WSP8205 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , 20V 20m 6.0A which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSP8205 meet the RoHS and Green High Frequency Point-o

 9.89. Size:990K  winsok
 wst8205.pdf

WST8205 Dual N-Ch MOSFET General Description Product Summery The WST8205 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 24m 5.8A for most of the small power switching and load switch applications. Applications The WST8205 meet the RoHS and Green Product High Frequency Point-

 9.90. Size:422K  cn sino-ic
 se8205a.pdf

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE8205A N-Channel Enhancement Mode Field Effect Transistor Revision B External Dimensions (Unit mm) Features VDS = 20V,ID = 6A RDS(ON)

 9.91. Size:781K  cn vanguard
 vs8205bh.pdf

VS8205BH 16V/5.5A N-Channel Advanced Power MOSFET Features V DS 16 V R DS(on),TYP@ VGS=4.5 V 28 m Enhancement mode R DS(on),TYP@ VGS=2.5 V 37 m Low on-resistance RDS(on) @ VGS=2.5 V I D 5.5 A Fast Switching and High efficiency Pb-free lead plating; RoHS compliant SOT23-6L Tape and reel Part ID Package Type Marking information VS8205BH SOT23-

 9.92. Size:787K  cn vbsemi
 vbzc8205a.pdf

VBZC8205A www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.025 at VGS = 4.5 V Available 4.5 20 RoHS* 0.032 at VGS = 2.5 V 3.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RA

 9.93. Size:1472K  cn vbsemi
 ut8205ag-ag6.pdf

UT8205AG-AG6 www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G2 S2 G2

 9.94. Size:2350K  cn vbsemi
 gtt8205s.pdf

GTT8205S www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G2 S2 G2 3

 9.95. Size:727K  cn vbsemi
 ceg8205.pdf

CEG8205 www.VBsemi.tw Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V Available 6.6 25 RoHS* 0.032 at VGS = 2.5 V 5.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RATIN

 9.96. Size:877K  cn vbsemi
 stt8205s.pdf

STT8205S www.VBsemi.tw Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.022 at VGS = 4.5 V TrenchFET Power MOSFET 6.0 20 1.8 nC 100 % Rg Tested 0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/EC TSOP-6 D1 D 2 D Top View G1 D1 1 6 G 1

 9.97. Size:1138K  cn vbsemi
 vbzb8205a.pdf

VBZB8205A www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G

 9.98. Size:1183K  cn vbsemi
 vbzc8205b.pdf

VBZC8205B www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.020 at VGS = 4.5 V Available 4.8 20 RoHS* 0.032 at VGS = 2.5 V 3.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RA

 9.99. Size:405K  cn tech public
 ut8205ag-ag6.pdf

www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw

 9.100. Size:1805K  cn tech public
 tpm8205ats6.pdf

 9.101. Size:1795K  cn tech public
 fs8205a.pdf

 9.102. Size:373K  cn tech public
 tpm8205ts6.pdf

www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw

 9.103. Size:1323K  cn yangzhou yangjie elec
 yjs8205a.pdf

RoHS COMPLIANT YJS8205A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 5.5A D R ( at V =4.5V) 25mohm DS(ON) GS R ( at V =2.5V) 32mohm DS(ON) GS R ( at V =1.8V) 49mohm DS(ON) GS 100% V Tested DS General Description Trench Power MV MOSFET technology High Power and current handing capability

 9.104. Size:407K  cn wuxi unigroup
 ttk8205a.pdf

TTK8205A Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET Features Product Summary VDS 20V Trench Power Technology Low RDS(ON) RDS(ON) (at VGS=10V)

 9.105. Size:369K  cn wuxi unigroup
 ttk8205.pdf

TTK8205 Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 20V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Devi

 9.106. Size:519K  cn hmsemi
 hm8205.pdf

HM8205 SOT-23-6LPlastic-EncapsulateMosfets HM8205 Dual N-Channel Power Mosfet Features TrenchFET Power MOSFET Excellent R DS(on) Low Gate Charge High Power and Current Handing Capability 4.6. Gate Surface Mount Package 2.5. Drain Applications 1.3. Source Battery Protection Load Switch Power Management Marking HM8205XX Maximum Ra

 9.107. Size:509K  cn hmsemi
 hm8205q.pdf

 9.108. Size:920K  cn hmsemi
 hm8205d.pdf

Dual N-Channel Trench Power MOSFET General Description The uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. Features Schematic Diagram VDS = 20V,ID = A R

 9.109. Size:438K  cn hmsemi
 hm8205a.pdf

HM8205A Dual N-Channel Enhancement Mode Power MOSFET D1 D2 Description The HM8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram General Features VDS = 19.5V,ID = 6A RDS(

 9.110. Size:355K  cn haohai electr
 h8205a.pdf

H8205A N-Channel MOSFET 6A, 19.5V, H 8205A H8205A TSSOP-8 HAOHAI H8205A-TS 3000Pcs 30000Pcs NCE8205A UT8205A FS8205A CEG8205A S8205A GM8205A KI8205A TA8205A STN8205A H8205A

 9.111. Size:1271K  cn apm
 ap8205a-21.pdf

AP8205A-21 20V N+N-Channel Enhancement Mode MOSFET Description The AP8205A-21 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =6.5A DS D R

 9.112. Size:681K  cn apm
 ap8205s.pdf

AP8205S 20V N+N Channel Enhancement Mode MOSFET Description The AP8205S uses advanced trench technology to provide excellent R , low gate charge DS(ON) and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V, ID = 6A RDS(ON)