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3090K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3090K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 84 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 90 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 45 nC
   Tiempo de subida (tr): 36 nS
   Conductancia de drenaje-sustrato (Cd): 320 pF
   Resistencia entre drenaje y fuente RDS(on): 0.005 Ohm
   Paquete / Cubierta: TO-252

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3090K Datasheet (PDF)

 ..1. Size:599K  cn shenzhen fuman elec
3090k.pdf

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FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.3090K(S&CIC1688) N-Channel Trench Power MOSFETGeneral DescriptionThe 3090K uses advanced trench technology to provideexcellent R

 0.1. Size:385K  ncepower
nce3090k.pdf

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Pb Free Producthttp://www.ncepower.com NCE3090KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =90A RDS(ON) =4.1m (typical) @ VGS=10V Schematic diagram RDS(ON) =5.9m (typi

 0.2. Size:659K  cn sino-ic
se3090k.pdf

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SE3090KN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V = 30VDSlow gate charge. It can be used in a wide R = 4.1m @ V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowTO-252Absolute Maximum RatingsParamete

 0.3. Size:283K  inchange semiconductor
2sk3090k.pdf

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isc N-Channel MOSFET Transistor 2SK3090KFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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