3090K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.3090K(S&CIC1688) N-Channel Trench Power MOSFETGeneral DescriptionThe 3090K uses advanced trench technology to provideexcellent R

Pb Free Producthttp://www.ncepower.com NCE3090KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =90A RDS(ON) =4.1m (typical) @ VGS=10V Schematic diagram RDS(ON) =5.9m (typi

SE3090KN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V = 30VDSlow gate charge. It can be used in a wide R = 4.1m @ V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowTO-252Absolute Maximum RatingsParamete

isc N-Channel MOSFET Transistor 2SK3090KFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid