SC8205 Todos los transistores

 

SC8205 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SC8205
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.4 nS
   Cossⓘ - Capacitancia de salida: 98.48 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TSSOP-8

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SC8205 Datasheet (PDF)

 ..1. Size:361K  cn shenzhen fuman elec
sc8205.pdf

SC8205
SC8205

FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD.5 6SC8205 ( 20V N MOS S&CIC0706)20V N-Channel Enhancement-Mode MOSFETRDS(ON), Vgs@1.8V, Ids@2.0A =

 0.1. Size:328K  cn shenzhen fuman elec
sc8205s.pdf

SC8205
SC8205

FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.SC8205S (S&CIC0706) 20V N MOS 20V N-Channel Enhancement-Mode MOSFET2 3 4RDS(ON), Vgs@1.8V, Ids@2.0A

 9.1. Size:93K  st
msc82001.pdf

SC8205
SC8205

MSC82001RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY @ RATED:1CONDITIONS.HERMETIC STRIPAC PACKAGE.POUT 1.0 W MIN. WITH 7.0 dB GAIN=@ 2.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82001 82001PIN CONNECTIONDESCRIPTIONThe MSC82001 is a common base hermetic

 9.2. Size:87K  st
msc82010.pdf

SC8205
SC8205

MSC82010RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.VSWR CAPABILITY :1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 10 W MIN. WITH 5.2 dB GAIN @OUT =2.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82010 82010PIN CONNECTIONDESCRIPTIONThe MSC82010 is a common base hermeticallysealed silicon NPN microw

 9.3. Size:84K  st
msc82005.pdf

SC8205
SC8205

MSC82005RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.VSWR CAPABILITY :1 @ RATEDCONDITIONS.REFRACTORY/GOLD METALLIZATION.HERMETIC STRIPAC PACKAGE.POUT 5.0 W MIN. WITH 7.0 dB GAIN=@ 2.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82005 82005PIN CONNECTIONDESCRIPTIONThe MSC82005 is a common base hermeti

 9.4. Size:85K  st
msc82040.pdf

SC8205
SC8205

MSC82040RF & MICROWAVE TRANSISTORSGENERAL PURPOSE LINEAR APPLICATIONS.EMITTER BALLASTED.CLASS A LINEAR OPERATION.COMMON EMITTER.VSWR CAPABILITY :1 @ RATEDCONDITIONS.ft 1.6 GHz TYPICAL.NOISE FIGURE 15.5 dB @ 2 GHz.230 4L STUD (S027).POUT 27 dBm MIN. @ 1.0 GHz= hermetically sealedORDER CODE BRANDINGMSC82040 82040PIN CONNECTIONDESCRIPTIONThe MSC82040 is a her

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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