PNMT6N1-LB Todos los transistores

PNMT6N1-LB Transistor with N-MOSFET Feature Top View This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. E 1 PNMT6N1-LB is composed by a transistor and a MOSFET 6 C Transistor B 2 G 5 S D 3 4 Very low collector to emitter saturation voltage DC current gain

PNMT6N1 Transistor with N-MOSFET Feature Top View This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 1 PNMT6N1 is composed by a transistor and a MOSFET 6 E C Transistor 2 B 5 G 3 D 4 S Very low collector to emitter saturation voltage DC current gain >100 3A continuous collector current PNP epitaxial planar

PNMT6N2 Transistor with N-MOSFET Feature Top View This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 6 5 C 4 PNMT6N2 is composed by a transistor and a MOSFET C S Transistor 8(B/D) 7(C) Very low collector to emitter saturation voltage DC current gain >100 1 2 3 E E G 3A continuous collector current PNP epitaxial

PNMT60V02 N-Channel MOSFET Description PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) VGS(th)(V) ID(A) G 1 60 7.5@ VGS=10V 0.5 to 1.5 0.18 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Par

PNMT60V02E N-Channel MOSFET Description PNMT60V02E is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary V (V) R ( ) V (V) I (A) DS DS(on) GS(th) D G 1 60 7.5@ V =10V 0.5 to 1.5 0.18 GS S 2 Electrical characteristics per line@25 ( unless otherwise specified) Para

PNMT60V3 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D 3 low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 1 60 0.096@ VGS=4.5V 3 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF/ON CHARACTE