PTF10HN08 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PTF10HN08
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 64 nS
Cossⓘ - Capacitancia de salida: 440 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET PTF10HN08
Principales características: PTF10HN08
ptf10hn08 pty10hn08.pdf
PTF10HN08/PTY10HN08 80V/100A N-Chnnel MOSFET Features D 80V/100A RDS(ON)=6.5m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current D % 100 Avalanche Tested Application G S G D S Power Supply TO-220F TO-263 DC-DC Converters UPS Battery Manageme e Absolute Maximum Ratings
ptf10149.pdf
PTF 10149 70 Watts, 921 960 MHz GOLDMOS Field Effect Transistor Description INTERNALLY MATCHED The PTF 10149 is an internally matched 70 watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to Performance at 960 MHz, 26 Volts 960 MHz. It operates with 50% efficiency and 16 dB typical gain. - Output Power = 70 Watts Nitride surface passivation and
ptf10n65.pdf
PTF1 0N65 65 0V/1 0A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 0.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above
Otros transistores... PTD3006 , PTD4080B , PTD4N60 , PTD50N06 , PTD60N02 , PTD7N65 , PTD80N06 , PTF10N65 , 2SK3878 , PTY10HN08 , PTF12N65 , PTF13N50 , PTF2N65 , PTF5N65 , PTF7N65 , PTF8N65 , PTN3006 .
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