PTP10HN10 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: PTP10HN10

..1. Size:1916K cn puolop
ptp10hn10.pdf pdf_icon

PTP10HN10 100V/100A N-Chnnel MOSFET Features D 100V/100A RDS(ON)=7.1m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current % 100 Avalanche Tested Application Power Supply TO-220 DC-DC Converters UPS Battery Manageme ent System Absolute Maximum Ratings (T =25 C unless otherwise noted) A Sy

9.1. Size:909K pipsemi
ptp10n80 pta10n80.pdf pdf_icon

PTP10N80 PTA10N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 800V 1.0 10A RDS(ON),typ.=1.0 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications ATX Power G LCD Panel Power D S G D S Ordering Information Part Number Package Brand TO-220 TO-220F

9.2. Size:827K pipsemi
ptp10n40b pta10n40b.pdf pdf_icon

PTP10N40B PTA10N40B 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.45 10A RDS(ON),typ.=0.45 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number

Otros transistores... PTF12N65 , PTF13N50 , PTF2N65 , PTF5N65 , PTF7N65 , PTF8N65 , PTN3006 , PTN30P03 , SPP20N60C3 , PTP12HN06 , PTY12HN06 , PTP4N60 , PTF4N60 , PDB1216E , PDB3010H , PDC2306Z , PDC2603Z .