PTP10HN10 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTP10HN10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 103 nC
trⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: TO220
PTP10HN10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTP10HN10 Datasheet (PDF)
ptp10hn10.pdf
PTP10HN10100V/100A N-Chnnel MOSFETFeaturesD 100V/100ARDS(ON)=7.1m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current% 100 Avalanche TestedApplication Power SupplyTO-220 DC-DC Converters UPS Battery Manageme ent System Absolute Maximum Ratings (T =25C unless otherwise noted)ASy
ptp10n80 pta10n80.pdf
PTP10N80 PTA10N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 800V 1.0 10A RDS(ON),typ.=1.0 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications ATX Power G LCD Panel Power D S G D S Ordering Information Part Number Package Brand TO-220 TO-220F
ptp10n40b pta10n40b.pdf
PTP10N40B PTA10N40B 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.45 10A RDS(ON),typ.=0.45 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
