PTP10HN10 Datasheet and Replacement
Type Designator: PTP10HN10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 370 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: TO220
PTP10HN10 substitution
PTP10HN10 Datasheet (PDF)
ptp10hn10.pdf

PTP10HN10100V/100A N-Chnnel MOSFETFeaturesD 100V/100ARDS(ON)=7.1m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current% 100 Avalanche TestedApplication Power SupplyTO-220 DC-DC Converters UPS Battery Manageme ent System Absolute Maximum Ratings (T =25C unless otherwise noted)ASy
ptp10n80 pta10n80.pdf

PTP10N80 PTA10N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 800V 1.0 10A RDS(ON),typ.=1.0 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications ATX Power G LCD Panel Power D S G D S Ordering Information Part Number Package Brand TO-220 TO-220F
ptp10n40b pta10n40b.pdf

PTP10N40B PTA10N40B 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.45 10A RDS(ON),typ.=0.45 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number
Datasheet: PTF12N65 , PTF13N50 , PTF2N65 , PTF5N65 , PTF7N65 , PTF8N65 , PTN3006 , PTN30P03 , AON7410 , PTP12HN06 , PTY12HN06 , PTP4N60 , PTF4N60 , PDB1216E , PDB3010H , PDC2306Z , PDC2603Z .
History: 2SK1446 | SVF2N60CNF | BUK9624-55A
Keywords - PTP10HN10 MOSFET datasheet
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History: 2SK1446 | SVF2N60CNF | BUK9624-55A



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