PTP10HN10 Datasheet. Specs and Replacement

Type Designator: PTP10HN10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TO220

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PTP10HN10 datasheet

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PTP10HN10

PTP10HN10 100V/100A N-Chnnel MOSFET Features D 100V/100A RDS(ON)=7.1m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current % 100 Avalanche Tested Application Power Supply TO-220 DC-DC Converters UPS Battery Manageme ent System Absolute Maximum Ratings (T =25 C unless otherwise noted) A Sy... See More ⇒

 9.1. Size:909K  pipsemi
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PTP10HN10

PTP10N80 PTA10N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 800V 1.0 10A RDS(ON),typ.=1.0 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications ATX Power G LCD Panel Power D S G D S Ordering Information Part Number Package Brand TO-220 TO-220F ... See More ⇒

 9.2. Size:827K  pipsemi
 ptp10n40b pta10n40b.pdf pdf_icon

PTP10HN10

PTP10N40B PTA10N40B 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.45 10A RDS(ON),typ.=0.45 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number... See More ⇒

Detailed specifications: PTF12N65, PTF13N50, PTF2N65, PTF5N65, PTF7N65, PTF8N65, PTN3006, PTN30P03, SPP20N60C3, PTP12HN06, PTY12HN06, PTP4N60, PTF4N60, PDB1216E, PDB3010H, PDC2306Z, PDC2603Z

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