PDC3810V MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: PDC3810V

..1. Size:701K potens
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PDC3810V 30V Dual N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 13m 35A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,35A, RDS(ON) =13m @VGS = 10V performance, and withstand h

9.1. Size:921K potens
pdc3803r.pdf pdf_icon

30V N-Channel MOSFETs PDC3803R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 9.5m 43A advanced technology has been especially tailored to Q2 30V 4.2m 85A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features

9.2. Size:651K potens
pdc3801r.pdf pdf_icon

30V N-Channel MOSFETs PDC3801R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 9m 55A advanced technology has been especially tailored to Q2 30V 6m 80A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features av

Otros transistores... PTF4N60 , PDB1216E , PDB3010H , PDC2306Z , PDC2603Z , PDC2604Z , PDC3801R , PDC3803R , NCEP15T14 , PDC3902X , PDC3903X , PDC3903Z , PDC3904Z , PDC3905Z , PDC3906Z , PDC3907Z , PDC3908X .