PDC3810V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PDC3810V Datasheet (PDF)

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PDC3810V 30V Dual N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 13m 35A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,35A, RDS(ON) =13m @VGS = 10V performance, and withstand h

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30V N-Channel MOSFETs PDC3803R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 9.5m 43A advanced technology has been especially tailored to Q2 30V 4.2m 85A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features

9.2. Size:651K potens
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30V N-Channel MOSFETs PDC3801R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 9m 55A advanced technology has been especially tailored to Q2 30V 6m 80A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features av

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .