PDC3810V Datasheet and Replacement
Type Designator: PDC3810V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: PPAK3X3
PDC3810V substitution
PDC3810V Datasheet (PDF)
pdc3810v.pdf

PDC3810V 30V Dual N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 13m 35A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,35A, RDS(ON) =13m @VGS = 10V performance, and withstand h
pdc3803r.pdf

30V N-Channel MOSFETs PDC3803R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 9.5m 43A advanced technology has been especially tailored to Q2 30V 4.2m 85A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features
pdc3801r.pdf

30V N-Channel MOSFETs PDC3801R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 9m 55A advanced technology has been especially tailored to Q2 30V 6m 80A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features av
Datasheet: PTF4N60 , PDB1216E , PDB3010H , PDC2306Z , PDC2603Z , PDC2604Z , PDC3801R , PDC3803R , IRFP450 , PDC3902X , PDC3903X , PDC3903Z , PDC3904Z , PDC3905Z , PDC3906Z , PDC3907Z , PDC3908X .
History: AP4525GEH-HF
Keywords - PDC3810V MOSFET datasheet
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History: AP4525GEH-HF



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