PDN2309S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDN2309S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 155 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: SOT23-3S

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PDN2309S datasheet

 ..1. Size:426K  potens
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PDN2309S

20V P-Channel MOSFETs PDN2309S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 33m -5.8A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-5.8A, RDS(ON) =33m @VGS = -4.5V performance, and withstand hi

 9.1. Size:465K  potens
 pdn2318s.pdf pdf_icon

PDN2309S

20V N-Channel MOSFETs PDN2318S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 65m 4A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 4A, RDS(ON) =65m @VGS = 4.5V performance, and withstand high energ

 9.2. Size:395K  potens
 pdn2312s.pdf pdf_icon

PDN2309S

20V N-Channel MOSFETs PDN2312S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 19m 6.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 6.7A, RDS(ON)=19m @VGS=4.5V performance, and withstand high ener

 9.3. Size:499K  potens
 pdn2313s.pdf pdf_icon

PDN2309S

20V P-Channel MOSFETs PDN2313S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 65m -4.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.1A, RDS(ON) =65m @VGS = -4.5V performance, and withstand hi

MOSTRAR MÁS

Otros transistores... PDD3906, PDD3908, PDD6902, PDEC2210V, PDH0980, PDH6902, PDK3908, PDK6912, 75N75, PDN2311S, PDN2312S, PDN2313S, PDN2318S, PDN3611S, PDN3612S, PDN3909S, PDN3912S