PDN2309S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PDN2309S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
   Paquete / Cubierta: SOT23-3S

Búsqueda de reemplazo de MOSFET PDN2309S

PDN2309S Datasheet (PDF)

..1. Size:426K potens
pdn2309s.pdf

20V P-Channel MOSFETs PDN2309S General Description BVDSS RDSON IDThese P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 33m -5.8A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-5.8A, RDS(ON) =33m@VGS = -4.5V performance, and withstand hi

9.1. Size:465K potens
pdn2318s.pdf

20V N-Channel MOSFETs PDN2318S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 65m 4A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 4A, RDS(ON) =65m@VGS = 4.5V performance, and withstand high energ

9.2. Size:395K potens
pdn2312s.pdf

20V N-Channel MOSFETs PDN2312S General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 19m 6.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 6.7A, RDS(ON)=19m@VGS=4.5V performance, and withstand high ener

9.3. Size:499K potens
pdn2313s.pdf

20V P-Channel MOSFETs PDN2313S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 65m -4.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.1A, RDS(ON) =65m@VGS = -4.5V performance, and withstand hi

9.4. Size:498K potens
pdn2311s.pdf

20V P-Channel MOSFETs PDN2311S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 50m -4.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.7A, RDS(ON)=50m@VGS=-4.5V performance, and withstand high

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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