PDN2309S Todos los transistores

 

PDN2309S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDN2309S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
   Paquete / Cubierta: SOT23-3S
     - Selección de transistores por parámetros

 

PDN2309S Datasheet (PDF)

 ..1. Size:426K  potens
 pdn2309s.pdf pdf_icon

PDN2309S

20V P-Channel MOSFETs PDN2309S General Description BVDSS RDSON IDThese P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 33m -5.8A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-5.8A, RDS(ON) =33m@VGS = -4.5V performance, and withstand hi

 9.1. Size:465K  potens
 pdn2318s.pdf pdf_icon

PDN2309S

20V N-Channel MOSFETs PDN2318S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 65m 4A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 4A, RDS(ON) =65m@VGS = 4.5V performance, and withstand high energ

 9.2. Size:395K  potens
 pdn2312s.pdf pdf_icon

PDN2309S

20V N-Channel MOSFETs PDN2312S General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 19m 6.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 6.7A, RDS(ON)=19m@VGS=4.5V performance, and withstand high ener

 9.3. Size:499K  potens
 pdn2313s.pdf pdf_icon

PDN2309S

20V P-Channel MOSFETs PDN2313S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 65m -4.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.1A, RDS(ON) =65m@VGS = -4.5V performance, and withstand hi

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: PDK6912 | FDB6690S | SIHP22N65E | 2SK2907-01 | RJK0629DPK | RUH1H130S | WMQ46N03T1

 

 
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