PDN2309S
MOSFET. Datasheet pdf. Equivalent
Type Designator: PDN2309S
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.56
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 5.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16.1
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 155
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033
Ohm
Package: SOT23-3S
PDN2309S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDN2309S
Datasheet (PDF)
..1. Size:426K potens
pdn2309s.pdf 
20V P-Channel MOSFETs PDN2309S General Description BVDSS RDSON IDThese P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 33m -5.8A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-5.8A, RDS(ON) =33m@VGS = -4.5V performance, and withstand hi
9.1. Size:465K potens
pdn2318s.pdf
20V N-Channel MOSFETs PDN2318S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 65m 4A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 4A, RDS(ON) =65m@VGS = 4.5V performance, and withstand high energ
9.2. Size:395K potens
pdn2312s.pdf
20V N-Channel MOSFETs PDN2312S General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 19m 6.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 6.7A, RDS(ON)=19m@VGS=4.5V performance, and withstand high ener
9.3. Size:499K potens
pdn2313s.pdf
20V P-Channel MOSFETs PDN2313S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 65m -4.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.1A, RDS(ON) =65m@VGS = -4.5V performance, and withstand hi
9.4. Size:498K potens
pdn2311s.pdf
20V P-Channel MOSFETs PDN2311S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 50m -4.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.7A, RDS(ON)=50m@VGS=-4.5V performance, and withstand high
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