PDN2311S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDN2311S
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.56 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 4.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.8 VQgⓘ - Carga de la puerta: 9.6 nC
trⓘ - Tiempo de subida: 21.6 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOT23-3S
Búsqueda de reemplazo de MOSFET PDN2311S
PDN2311S Datasheet (PDF)
pdn2311s.pdf
20V P-Channel MOSFETs PDN2311S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 50m -4.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.7A, RDS(ON)=50m@VGS=-4.5V performance, and withstand high
pdn2318s.pdf
20V N-Channel MOSFETs PDN2318S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 65m 4A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 4A, RDS(ON) =65m@VGS = 4.5V performance, and withstand high energ
pdn2312s.pdf
20V N-Channel MOSFETs PDN2312S General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 19m 6.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 6.7A, RDS(ON)=19m@VGS=4.5V performance, and withstand high ener
pdn2313s.pdf
20V P-Channel MOSFETs PDN2313S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 65m -4.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.1A, RDS(ON) =65m@VGS = -4.5V performance, and withstand hi
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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