PDN2311S Datasheet. Specs and Replacement

Type Designator: PDN2311S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.6 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23-3S

  📄📄 Copy 

PDN2311S substitution

- MOSFET ⓘ Cross-Reference Search

 

PDN2311S datasheet

 ..1. Size:498K  potens
 pdn2311s.pdf pdf_icon

PDN2311S

20V P-Channel MOSFETs PDN2311S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 50m -4.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.7A, RDS(ON)=50m @VGS=-4.5V performance, and withstand high ... See More ⇒

 8.1. Size:465K  potens
 pdn2318s.pdf pdf_icon

PDN2311S

20V N-Channel MOSFETs PDN2318S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 65m 4A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 4A, RDS(ON) =65m @VGS = 4.5V performance, and withstand high energ... See More ⇒

 8.2. Size:395K  potens
 pdn2312s.pdf pdf_icon

PDN2311S

20V N-Channel MOSFETs PDN2312S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 19m 6.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 6.7A, RDS(ON)=19m @VGS=4.5V performance, and withstand high ener... See More ⇒

 8.3. Size:499K  potens
 pdn2313s.pdf pdf_icon

PDN2311S

20V P-Channel MOSFETs PDN2313S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 65m -4.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.1A, RDS(ON) =65m @VGS = -4.5V performance, and withstand hi... See More ⇒

SHOW MORE

Detailed specifications: PDD3908, PDD6902, PDEC2210V, PDH0980, PDH6902, PDK3908, PDK6912, PDN2309S, AO3400A, PDN2312S, PDN2313S, PDN2318S, PDN3611S, PDN3612S, PDN3909S, PDN3912S, PDN3914S

Keywords - PDN2311S MOSFET specs

 PDN2311S cross reference

 PDN2311S equivalent finder

 PDN2311S pdf lookup

 PDN2311S substitution

 PDN2311S replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility