All MOSFET. PDH0980 Datasheet

 

PDH0980 Datasheet and Replacement


   Type Designator: PDH0980
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 275 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 1690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO263
 

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PDH0980 Datasheet (PDF)

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PDH0980

100V N-Channel MOSFETs PDH0980 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 100V 4.2m 150A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 100V,150A, RDS(ON) =4.2m@VGS = 10V performance, and withstand hi

Datasheet: PDC3964Z , PDC8974X , PDC906Z , PDD0906 , PDD3906 , PDD3908 , PDD6902 , PDEC2210V , AON6380 , PDH6902 , PDK3908 , PDK6912 , PDN2309S , PDN2311S , PDN2312S , PDN2313S , PDN2318S .

History: MTA55N20J3

Keywords - PDH0980 MOSFET datasheet

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