PDH0980 Datasheet and Replacement
Type Designator: PDH0980
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 275 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 110 nC
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 1690 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO263
PDH0980 substitution
PDH0980 Datasheet (PDF)
..1. Size:684K potens
pdh0980.pdf
pdh0980.pdf
100V N-Channel MOSFETs PDH0980 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 100V 4.2m 150A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 100V,150A, RDS(ON) =4.2m@VGS = 10V performance, and withstand hi
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