PDH0980 Datasheet. Specs and Replacement
Type Designator: PDH0980 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 275 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 1690 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO263
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PDH0980 datasheet
pdh0980.pdf
100V N-Channel MOSFETs PDH0980 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 100V 4.2m 150A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 100V,150A, RDS(ON) =4.2m @VGS = 10V performance, and withstand hi... See More ⇒
Detailed specifications: PDC3964Z, PDC8974X, PDC906Z, PDD0906, PDD3906, PDD3908, PDD6902, PDEC2210V, IRFZ24N, PDH6902, PDK3908, PDK6912, PDN2309S, PDN2311S, PDN2312S, PDN2313S, PDN2318S
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