All MOSFET. PDN3611S Datasheet

 

PDN3611S Datasheet and Replacement


   Type Designator: PDN3611S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.4 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT23-3S
 

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PDN3611S Datasheet (PDF)

 ..1. Size:426K  potens
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PDN3611S

30V P-Channel MOSFETs PDN3611S General Description BVDSS RDSON IDThese P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 65m -4.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-4.1A, RDS(ON) =65m@VGS = -10V performance, and withstand hig

 8.1. Size:488K  potens
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PDN3611S

30V N-Channel MOSFETs PDN3612S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 32m 5.3A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 5.3 A, RDS(ON) =32m@VGS = 4.5V performance, and withstand high

Datasheet: PDH6902 , PDK3908 , PDK6912 , PDN2309S , PDN2311S , PDN2312S , PDN2313S , PDN2318S , MMIS60R580P , PDN3612S , PDN3909S , PDN3912S , PDN3914S , PDN3916S , PDN4911S , PDN6911S , PDP0959 .

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