PDH6902 MOSFET. Datasheet pdf. Equivalent
Type Designator: PDH6902
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 183 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 114 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 58.2 nC
trⓘ - Rise Time: 56.3 nS
Cossⓘ - Output Capacitance: 445 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO263
PDH6902 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDH6902 Datasheet (PDF)
..1. Size:673K potens
pdh6902.pdf
pdh6902.pdf
60V N-Channel MOSFETs PDH6902 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 4.5m 114A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,114A, RDS(ON
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