PDH6902 Spec and Replacement
Type Designator: PDH6902
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 183 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 114 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 56.3 nS
Cossⓘ - Output Capacitance: 445 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO263
PDH6902 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDH6902 Specs
pdh6902.pdf
60V N-Channel MOSFETs PDH6902 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 4.5m 114A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,114A, RDS(ON... See More ⇒
Detailed specifications: PDC8974X , PDC906Z , PDD0906 , PDD3906 , PDD3908 , PDD6902 , PDEC2210V , PDH0980 , 2N60 , PDK3908 , PDK6912 , PDN2309S , PDN2311S , PDN2312S , PDN2313S , PDN2318S , PDN3611S .
History: PDK6912 | PSMN018-100ESF | PDH0980 | HAT1065R
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