JVC502E Specs and Replacement
Type Designator: JVC502E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 119 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 1252 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: TO220
JVC502E substitution
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JVC502E datasheet
jvc502e.pdf
100V, 119A, 4.5m N-channel Power SGT MOSFET JVC502E Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 119 A Super short circuit ruggedness RDS(ON)_Typ(@VGS=10V 4.5 mW Applications Motor driver PWM Application ... See More ⇒
Detailed specifications: JMTV3400A, JMTY11DN10A, JMTY2310A, JVC085T, JVC103K, JVC103T, JVC105E, JVC113T, P60NF06, SLA08N10G, SLA10N03T, SLB60R105E7D, SLB65R380E7C, SLC013RN06G, SLD07RN10G, SLD10N65U, SLD110N02TB
Keywords - JVC502E MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRLU3714 | PPMT2301 | SRC60R022FBS | MT06N008A | DH020N03D | SRC60R017FB
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