JVC502E Datasheet and Replacement
Type Designator: JVC502E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 119 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 1252 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: TO220
JVC502E substitution
JVC502E Datasheet (PDF)
jvc502e.pdf
100V, 119A, 4.5m N-channel Power SGT MOSFETJVC502EProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 119 A Super short circuit ruggednessRDS(ON)_Typ(@VGS=10V 4.5 mWApplications Motor driver PWM Application
Datasheet: JMTV3400A , JMTY11DN10A , JMTY2310A , JVC085T , JVC103K , JVC103T , JVC105E , JVC113T , P60NF06 , SLA08N10G , SLA10N03T , SLB60R105E7D , SLB65R380E7C , SLC013RN06G , SLD07RN10G , SLD10N65U , SLD110N02TB .
History: SLB60R105E7D | 2SK2876-01MR | BUK436-200A | SLU4N65U | UT3N06G-AE3
Keywords - JVC502E MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SLB60R105E7D | 2SK2876-01MR | BUK436-200A | SLU4N65U | UT3N06G-AE3
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